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Nexperia PNP Transistor PBHV9115X,115, 1 A, -150 V, 3-Pin SOT-89 PBHV9115X,115
Specifications
| Country of Origin | Hong Kong |
|---|---|
| Brand | Nexperia |
| Height | 1.6mm |
| Length | 4.6mm |
| Model | PBHV9115X,115 |
| Width | 2.6mm |
| Mount Type | Surface |
| Series | PBHV9115X |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-89 |
| Minimum Operating Temperature | -65°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | -150V |
| Minimum DC Current Gain hFE | 100 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | -6V |
| Maximum Collector Base Voltage VCBO | -200V |
| Maximum Power Dissipation Pd | 1.5W |
| Maximum DC Collector Current Idc | -1A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 100MHz |
Key Features
- Rated for maximum DC collector current of 1 ampere.
- Collector-emitter voltage rating of -150 volts.
- Designed with a PNP transistor polarity and single transistor configuration.
- Surface mount package type SOT-89 with 3 pins for easy PCB integration.
- High power dissipation capacity of 1.5 watts for reliable operation.
- Wide operating temperature range from -65°C to 150°C.
- Minimum DC current gain (hFE) of 100 ensures effective amplification.
- Maximum transition frequency (ft) of 100 MHz suitable for high-frequency applications.
Product Description
Nexperia PBHV9115X,115 bipolar PNP transistor is engineered for general-purpose amplification and switching applications in electronics and electrical engineering.
This device supports a maximum DC collector current of 1 ampere and withstands collector-emitter voltage up to -150 volts. Its transistor polarity is PNP with a single transistor configuration, housed in a surface mount SOT-89 package with 3 pins, facilitating efficient assembly on printed circuit boards.
It offers a maximum power dissipation of 1.5 watts, ensuring stable operation even under moderate power loads. The transistor operates reliably over an extended temperature range from -65°C to 150°C, supporting diverse industrial, automotive, and electronic manufacturing environments.
Key electrical parameters include a minimum DC current gain (hFE) of 100 and a maximum transition frequency (ft) of 100 MHz, making it suitable for medium-frequency switching and amplification tasks.
Maximum DC collector current of 1 ampere. Collector-emitter voltage of -150 volts. PNP polarity with single transistor configuration. SOT-89 surface mount 3-pin package. Power dissipation rating of 1.5 watts. Operating temperature range from -65°C to 150°C.
Minimum DC current gain of 100. Maximum transition frequency of 100 MHz. Compact dimensions: 4.6 mm length, 2.6 mm width, 1.6 mm height. Manufactured in Hong Kong with RoHS compliance.
This transistor is extensively used in industrial electronics, automotive systems, telecommunications, and laboratory applications requiring reliable general-purpose bipolar transistors.
Explore more Nexperia Bipolar Transistors and related semiconductor products on EnvMart for enhanced design and manufacturing capabilities.
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Frequently Asked Questions
The maximum DC collector current for this transistor is 1 ampere.
It has a collector-emitter voltage rating of -150 volts.
This model has a maximum power dissipation capacity of 1.5 watts.
The operating temperature range is from -65°C to 150°C.
It is housed in a surface mount SOT-89 package with 3 pins.
The minimum DC current gain (hFE) is 100.
The maximum transition frequency for this model is 100 MHz.
The dimensions are 4.6 mm in length, 2.6 mm in width, and 1.6 mm in height.
This model has a PNP transistor polarity.
It is suitable for general-purpose amplification and switching applications in electronics and electrical engineering.
This transistor is RoHS compliant.
The maximum collector-base voltage (VCBO) is -200 volts.
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