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DiodesZetex P-Channel Enhancement MOSFET, 3.3 A, 20 V, 3-Pin SOT-23 DMG2305UX

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DiodesZetex P-Channel Enhancement MOSFET, 3.3 A, 20 V, 3-Pin SOT-23 DMG2305UX

Name: DiodesZetex P-Channel Enhancement MOSFET, 3.3 A, 20 V, 3-Pin SOT-23 DMG2305UX
Brand: DiodesZetex
SKU: 378863
Price: 0.09 USD
Availability: InStock

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Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin	India
Brand	DiodesZetex
Height	1.1mm
Length	3mm
Model	DMG2305UX
Width	1.4mm
Mount Type	Surface
Series	DMG2305UX
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Automotive Standard	AEC-Q101
Channel Type	Type P
Maximum Continuous Drain Current Id	3.3A
Maximum Drain Source Voltage Vds	20V
Maximum Drain Source Resistance Rds	200mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	1.4W
Typical Gate Charge Qg @ Vgs	10.2nC
Maximum Gate Source Voltage Vgs	-8, +8V
Forward Voltage Vf	-1.2V

Key Features

Enhancement mode P-channel MOSFET designed for surface mount applications.
Maximum continuous drain current rated at 3.3 amperes for efficient power handling.
Operating voltage up to 20 volts with low drain-source resistance of 200 milliohms.
Compact dimensions of 3 mm length, 1.4 mm width, and 1.1 mm height for space-saving PCB layouts.
Wide operating temperature range from -55°C to 150°C suitable for automotive applications.
Typical gate charge of 10.2 nC at gate-source voltage ensuring fast switching performance.
Compliant with automotive standard AEC-Q101 ensuring reliability in harsh environments.
Forward voltage of -1.2V optimizing conduction efficiency.

Product Description

DiodesZetex DMG2305UX is a P-channel enhancement mode MOSFET designed to provide efficient switching with a maximum continuous drain current of 3.3 A and maximum drain-source voltage of 20 V. Packaged in a compact and low-profile 3-pin SOT-23, it is suitable for surface mounting on PCBs, making it ideal for modern electronics designs.

The device features a maximum drain-source resistance of 200 milliohms, allowing low power loss during conduction, and a typical gate charge of 10.2 nC at the specified gate-source voltage, facilitating rapid switching. It is capable of operating reliably across a wide temperature range from -55°C to 150°C, meeting the rigorous demands of automotive and industrial applications.

The compact size of only 3 mm length, 1.4 mm width, and 1.1 mm height helps in conserving PCB space while maintaining excellent electrical performance. Forward voltage rating of -1.2 V optimizes efficiency during operation. The component complies with the automotive industry standard AEC-Q101, underscoring its robustness and suitability for critical automotive electronics systems.

Enhancement mode P-channel MOSFET for surface mount technology. Continuous drain current of 3.3 A supports moderate load requirements. Supports maximum drain-source voltage of 20 V for versatile applications. Low drain-source resistance of 200 milliohms minimizes power dissipation.

Wide temperature range allows usage in extreme environments. Typical gate charge enables efficient switching performance. AEC-Q101 compliant, ensuring automotive reliability. Small form factor with 3-pin SOT-23 package dimensions.

This MOSFET is commonly used in electronics, power management, automotive control systems, and other industrial applications requiring reliable and efficient switching elements. For comprehensive design integration, professional PCB layout considerations and gate drive circuitry should be implemented.

Explore our extensive portfolio of semiconductors and MOSFET devices at EnvMart to select components tailored to your project’s power and efficiency demands.