ROHM N-Channel Enhancement MOSFET, 200 mA, 50 V, 3-Pin SOT-323 Package RU1J002YNTCL

ROHM RU1J002YNTCL is a high-performance N-Channel Enhancement MOSFET transistor suitable for various electronic and power switching applications. It features a maximum continuous drain current of 200 mA and a maximum drain-source voltage of 50 V, delivered in a compact 3-pin SOT-323 package optimized for surface mounting on printed circuit boards.

This MOSFET operates efficiently with a low maximum drain-source resistance of 9Ω, enabling efficient energy transfer and reduced thermal stress. Its wide operating temperature range (-55°C to 150°C) ensures dependable use in multiple industrial and commercial environments, including consumer electronics, low power industrial equipment, and automotive electronics where robust switching control is essential.

The device supports a maximum power dissipation of 150 mW and a forward voltage of 1.2 V. It withstands gate-source voltages up to ±8 V, allowing for flexible driving signal options. The small form-factor SOT-323 package reduces PCB footprint, aiding compact and lightweight product designs.

Key technical features include surface mount mounting type, 3-pin configuration for straightforward circuit integration, and reliable operation within stringent temperature tolerances. This transistor is ideally suited for switching loads, signal amplification, and digital logic control in industrial, laboratory, and electronic manufacturing settings.

Supports a maximum continuous drain current of 200 mA for moderate power applications. Operates at a maximum drain-source voltage of 50 V ensuring suitability for low voltage switching circuits. Enhancement mode channel type for efficient switching performance.

Compact 3-pin SOT-323 surface-mount package suitable for space-constrained electronic designs. Wide operating temperature range from -55°C to 150°C for reliability in varied environments. Low maximum drain-source resistance of 9Ω to minimize power loss and heat generation.

Maximum power dissipation of 150 mW supporting sustained operation under load. Forward voltage of 1.2 V and maximum gate-source voltage of ±8 V support diverse electronic control needs.

This ROHM MOSFET is engineered for efficiency and reliability in electronic component applications including power management systems, embedded circuits, and control devices. Its proven semiconductor technology makes it a preferred option for manufacturers requiring dependable, compact transistor solutions.

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