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DiodesZetex Isolated Dual Type P and Type N-Channel Enhancement MOSFET 7.5 A, 40 V, 8-Pin SOIC DMC4040SSD-13

Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 1.5mm
Length 4.95mm
Model DMC4040SSD-13
Width 3.95mm
Mount Type Surface
Maximum Operating Temperature +150°C
Package Type SOIC
Minimum Operating Temperature -55°C
Standards/Approvals J-STD-020, MIL-STD-202, RoHS, UL 94V-0, AEC-Q101
Pin Count 8
Number of Elements per Chip 2
Channel Type Type P, Type N
Maximum Continuous Drain Current Id 7.5A
Maximum Drain Source Voltage Vds 40V
Maximum Drain Source Resistance Rds 45mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 2.14W
Typical Gate Charge Qg @ Vgs 14nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf -0.7V
Transistor Configuration Isolated

Key Features

  • This device features a maximum continuous drain current of 7.5 A and a maximum drain-source voltage of 40 V.
  • It comes in an 8-pin SOIC surface mount package with a low drain-source resistance of 45 milliohms.
  • Enhancement mode operation and isolated transistor configuration provide high performance for switching applications.
  • Operates in a wide temperature range from -55°C to +150°C, suitable for industrial and automotive environments.
  • Has a maximum power dissipation rating of 2.14 W and a typical gate charge of 14 nC at gate-source voltage.
  • Complies with multiple standards including J-STD-020, MIL-STD-202, RoHS, UL 94V-0, and AEC-Q101.
  • Compact dimensions of 4.95 mm length, 3.95 mm width, and 1.5 mm height enable use in space-constrained PCB layouts.
  • Designed for use in discrete semiconductor applications including power management and switching circuits.

Product Description

DiodesZetex DMC4040SSD-13 is an isolated dual MOSFET transistor featuring both Type P and Type N channels in one surface mount 8-pin SOIC package. It offers a maximum continuous drain current of 7.5 A and a maximum drain-source voltage rating of 40 V, designed for reliable enhancement mode operation in a range of power electronics applications.

This MOSFET supports surface mount technology with a compact form factor measuring 4.95 mm in length, 3.95 mm in width, and 1.5 mm in height. Its low drain-source resistance of 45 milliohms reduces conduction losses, improving efficiency in switching and amplification circuits.

The device operates efficiently within an extended temperature range, from -55°C up to +150°C, making it suitable for harsh industrial, automotive, and manufacturing environments requiring robust electronic components. Typical gate charge of 14 nC ensures fast switching responses critical for power conversion and motor control.

Compliance with industry standards including J-STD-020, MIL-STD-202, RoHS directives, UL 94V-0 flammability rating, and AEC-Q101 automotive qualification assures high quality and performance consistency. The transistor configuration is isolated to prevent interference between the dual channel types, facilitating complex circuit designs.

Applications include power management modules, discrete semiconductor devices in industrial controls, automotive electronics, HVAC systems, and embedded systems in manufacturing equipment. The product aids in efficient power switching and signal processing within electronic devices.

Maximum continuous drain current of 7.5 A ensures robust power handling capabilities. Rated for 40 V drain-source voltage to support medium voltage circuits. Compact 8-Pin SOIC package compatible with automated PCB assembly.

Low on-resistance of 45 mΩ reduces power losses and heat generation. Meets stringent compliance standards for industrial and automotive usage. Wide operating temperature range accommodates demanding environments. Isolated dual channel configuration offers flexible circuit integration.

Typical gate charge facilitates fast switching processes. Set includes the single MOSFET device DMC4040SSD-13. For additional components and accessories, please browse the Electronics & Electricals category on EnvMart.

DiodesZetex Isolated Dual Type P and Type N-Channel Enhancement MOSFET 7.5 A, 40 V, 8-Pin SOIC DMC4040SSD-13
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Frequently Asked Questions

The maximum continuous drain current of this model is 7.5 A.

It has a maximum drain-source voltage rating of 40 V.

This unit measures 4.95 mm in length, 3.95 mm in width, and 1.5 mm in height.

The typical gate charge at gate-source voltage is 14 nC.

It operates efficiently within a temperature range of -55°C to +150°C.

It comes in an 8-pin SOIC surface mount package.

The maximum power dissipation rating for this model is 2.14 W.

It complies with J-STD-020, MIL-STD-202, RoHS, UL 94V-0, and AEC-Q101 standards.

The maximum drain-source resistance is 45 milliohms.

This model features both Type P and Type N channels in an isolated configuration.

It is designed for use in power management modules, industrial controls, automotive electronics, and HVAC systems.

The maximum gate-source voltage is rated at -20V to +20V.

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