Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET, 1.1 A Continuous Drain Current, 20 V Drain Source SI1967DH-T1-GE3

Vishay SI1967DH-T1-GE3 Isolated TrenchFET 2 Type P-Channel Power MOSFET is designed for low-voltage switching and analogue functions within compact electronic assemblies. Featuring a maximum drain-source voltage of 20 V and continuous drain current capacity of 1.1 A, this enhancement-mode transistor is suitable for precise power control in portable and dense circuit designs.

Housed in a compact 6-pin SC-88 surface-mount package, the MOSFET enables space-efficient PCB layouts. Its low on-resistance of 790 milliohms ensures minimal conduction losses, while the typical gate charge of 2.6 nanocoulombs allows for faster gate transitions, improving switching performance.

The device dissipates up to 1.25 W of power, handling moderate thermal stresses reliably. The operating temperature range from -55°C up to +150°C accommodates a wide variety of industrial, laboratory, and consumer electronics environments.

This MOSFET includes two transistor elements per chip, facilitating dual-channel switching or complementary circuit routing, enhancing design flexibility for engineers.

The maximum gate-to-source voltage of ±8 V must be observed to maintain device integrity. It is surface mounted via standard SC-88 footprints, allowing easy integration in automated assembly processes.

Maximum continuous drain current of 1.1 A supports steady load operation. 20 V drain-source voltage rating suitable for low-voltage switching. Enhancement channel mode allows controlled power management. Compact 6-pin SC-88 package ideal for dense PCB layouts.

Maximum drain-source resistance of 790 milliohms minimizes losses. Typical gate charge of 2.6 nanocoulombs ensures fast switching. Power dissipation capability of 1.25 W handles thermal load effectively. Operating temperature range from -55°C to +150°C allows broad use.

Two elements per chip facilitate dual-function switching applications. Gate-to-source voltage rating ±8 V prevents device over-stress.

This power MOSFET is commonly used in battery protection circuits in portable devices, load switching within compact power modules, analogue front-end level shifting, and dual-channel switching in high-density PCB layouts. Its isolated transistor configuration supports safe and efficient power control in electronic and industrial manufacturing applications.

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