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STMicroelectronics MDmesh M5 N-Channel MOSFET, 42 A, 710 V Enhancement Mode, 3-Pin TO-263 Package STB57N65M5
Specifications
| Country of Origin | China |
|---|---|
| Brand | STMicroelectronics |
| Height | 4.6mm |
| Length | 10.4mm |
| Model | STB57N65M5 |
| Width | 9.35mm |
| Mount Type | Surface |
| Series | MDmesh M5 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 42A |
| Maximum Drain Source Voltage Vds | 710V |
| Maximum Drain Source Resistance Rds | 63mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 250W |
| Typical Gate Charge Qg @ Vgs | 98nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | 1.3V |
Key Features
- Maximum continuous drain current of 42 A supports substantial load capacity.
- Drain-source voltage rating up to 710 V for high-voltage applications.
- TO-263 surface mount package with 3 pins facilitates easy PCB integration.
- Low gate charge of 98 nC enables fast switching and lower power loss.
- High maximum power dissipation of 250 W ensures reliable operation under heavy loads.
- Enhanced mode channel operation optimizes switching characteristics.
- Wide operating temperature range from -55°C to 150°C suitable for demanding environments.
- Robust design with typical forward voltage of 1.3 V for efficient conduction.
Product Description
STMicroelectronics STB57N65M5 is a N-Channel MDmesh™ M5 Series MOSFET optimized for high-power Power Factor Correction (PFC) and Pulse Width Modulation (PWM) topologies. With a maximum continuous drain current of 42 A and a drain-source voltage rating of 710 V, it is well suited for energy-efficient hard switching applications.
This device features low on-state resistance and low gate charge to minimize power losses, making it ideal for use in solar power converters, electronic lighting controls, and power supplies for consumer electronics. The 3-pin TO-263 surface mount package supports compact PCB layouts and effective thermal dissipation.
The STB57N65M5 supports enhancement mode operation and can handle a maximum power dissipation of 250 W. Its operating temperature range extends from -55°C to 150°C, ensuring reliable performance even in harsh industrial or automotive environments. The device also features a typical forward voltage of 1.3 V, contributing to overall efficiency in switching circuits.
Physical dimensions are 10.4 mm in length, 9.35 mm in width, and 4.6 mm in height, optimizing it for modern electronics designs requiring high power density. Maximum continuous drain current: 42 A. Maximum drain-source voltage: 710 V.
Package: TO-263, 3-pin surface mount. Typical gate charge: 98 nC. Maximum power dissipation: 250 W. Channel mode: Enhancement. Operating temperature range: -55°C to 150°C. Forward voltage: 1.3 V. Dimensions: 10.4 mm (L) x 9.35 mm (W) x 4.6 mm (H).
This MOSFET is suitable for industrial, commercial, and energy management applications such as solar inverters, power supplies, motor drives, and lighting control systems. It aids in enhancing energy efficiency and reducing heat dissipation in high-power electronic circuits.
Explore more from STMicroelectronics and find compatible components and solutions across EnvMart categories to create optimized power electronic systems.
Explore more products in our Power MOSFET category.
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Frequently Asked Questions
The maximum continuous drain current of the STB57N65M5 is 42 A.
This model has a drain-source voltage rating of up to 710 V.
The dimensions of this MOSFET are 10.4 mm in length, 9.35 mm in width, and 4.6 mm in height.
The typical gate charge for the STB57N65M5 is 98 nC.
The maximum power dissipation for this MOSFET is 250 W.
It operates within a temperature range of -55°C to 150°C.
This model comes in a TO-263 surface mount package with 3 pins.
The typical forward voltage for the STB57N65M5 is 1.3 V.
Yes, it is optimized for high-power applications such as Power Factor Correction (PFC) and Pulse Width Modulation (PWM) topologies.
This MOSFET uses an N-channel type.
The maximum gate-source voltage for the STB57N65M5 is -25 V to +25 V.
This model belongs to the MDmesh M5 series.
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