Vishay E N-Channel MOSFET 29 A 600 V Enhancement 3-Pin TO-263 SIHB30N60E-GE3

Vishay SIHB30N60E-GE3 is an E Series N-Channel MOSFET featuring an enhancement mode channel design, optimized for high current and high voltage applications. This device supports a maximum continuous drain current of 29 A and a drain-source voltage rating of 600 V within a compact TO-263 package.

Designed for surface mount technology, the MOSFET features a low figure-of-merit characterized by a maximum on-resistance of 125 mΩ, reducing conduction losses and increasing efficiency. The ultra-low gate charge of 85 nC facilitates fast switching speeds, making it an excellent choice for switch mode power supplies, power factor correction circuits, LED lighting, and telecom power supplies.

With a maximum power dissipation rating of 250 W and operating temperatures from -55°C to 150°C, this MOSFET is suitable for demanding industrial environments. It has three pins in a TO-263 package with physical dimensions of 10.67 mm length, 9.65 mm width, and 4.83 mm height, enabling compact design integration.

The device features a gate-source voltage tolerance of -20 V to +20 V and a typical forward voltage drop of 1.3 V, ensuring robust performance and reliability. Vishay's E Series MOSFETs are engineered for reduced switching and conduction losses, enhancing system efficiency.

This MOSFET operates with an enhancement mode channel suitable for high voltage applications. It features low maximum drain-source resistance of 125 mΩ, enabling efficient conduction. Maximum power dissipation is rated at 250 W for reliable thermal management.

The device provides fast switching with ultra-low gate charge of 85 nC. Operating temperatures range from -55°C to 150°C to support harsh environments. Compact dimensions include length of 10.67 mm, width of 9.65 mm, and height of 4.83 mm.

Suitable for surface mounting with 3-pin configuration for easy PCB integration. Typical forward voltage is 1.3 V, optimizing efficiency in power circuits. Maximum gate-source voltage tolerance is −20 V to +20 V ensuring robust gate drive capabilities.

This MOSFET is ideally suited for use in industrial power electronics, telecommunications, server power supplies, LED lighting systems, flyback converters, and power factor correction (PFC) circuits requiring fast and efficient switching characteristics.

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