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onsemi PowerTrench N-Channel MOSFET 76A 80V Enhancement 8-Pin WDFN FDMS86300DC
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.05mm |
| Length | 5.1mm |
| Model | FDMS86300DC |
| Width | 5.85mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | WDFN |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 76A |
| Maximum Drain Source Voltage Vds | 80V |
| Maximum Drain Source Resistance Rds | 5mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 125W |
| Typical Gate Charge Qg @ Vgs | 72nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
Key Features
- This device features an enhancement mode channel type optimized for high efficiency.
- Maximum drain-source resistance is low at 5 milliohms to minimize conduction losses.
- Rated power dissipation is 125 W supporting applications with significant thermal demands.
- It includes a typical gate charge of 72 nC at Vgs and supports maximum gate-source voltages of -20 to +20 V.
- The compact package measures 5.1 mm length, 5.85 mm width, and 1.05 mm height.
- Operating temperature range spans from -55°C minimum to 150°C maximum for reliability in harsh environments.
- The forward voltage drop is low at 1.3 V aiding in enhancing circuit efficiency.
Product Description
onsemi FDMS86300DC is a PowerTrench N-Channel MOSFET designed for surface mount applications requiring high current and voltage handling capabilities. It supports continuous drain currents up to 76 A and maximum drain-source voltage of 80 V, making it suitable for demanding power conversion and switching tasks.
This MOSFET employs enhancement mode channel technology with a low 5 milliohm on-resistance to minimize conduction losses and improve overall efficiency. The device's gate characteristics include a typical gate charge of 72 nC, facilitating fast switching speeds while operating safely within a gate-source voltage range of -20 V to +20 V.
The compact 8-pin WDFN package measures 5.1 mm in length, 5.85 mm in width, and 1.05 mm in height, allowing for space-efficient PCB layouts in modern electronic designs. Thermal performance is robust, with a maximum power dissipation of 125 W and a wide operating temperature range from -55°C to 150°C, ensuring reliability under industrial, automotive, and commercial usage conditions.
Typical forward voltage drop at 1.3 V further contributes to reduced power loss in conduction, enhancing energy efficiency in switching circuits and power management systems. This component is RoHS compliant and intended for high-performance semiconductor applications requiring durability and compact form.
This N-Channel MOSFET supports high current up to 76 A for demanding power control. Low on-resistance of 5 mΩ minimizes energy loss during operation. Wide operating temperature from -55°C to 150°C for industrial reliability.
Compact 8-pin WDFN package enables space-saving PCB designs. Gate charge characteristics allow for fast and efficient switching. Robust power dissipation rating of 125 W supports heavy loads. Forward voltage drop is optimized at 1.3 V for reduced conduction losses.
Ideal for use in industrial, automotive, power supply, and embedded electronics applications, the onsemi FDMS86300DC PowerTrench MOSFET combines performance and reliability with a compact footprint. For further professional component selections, explore EnvMart’s extensive semiconductor catalog.
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Frequently Asked Questions
The maximum continuous drain current for this model is 76 A.
It can handle a maximum drain-source voltage of 80 V.
The maximum drain-source resistance is 5 milliohms, which minimizes conduction losses.
The package measures 5.1 mm in length, 5.85 mm in width, and 1.05 mm in height.
The typical gate charge at Vgs is 72 nC, facilitating fast switching speeds.
The operating temperature range spans from -55°C to 150°C.
The typical forward voltage drop is 1.3 V, aiding in circuit efficiency.
It has a maximum power dissipation rating of 125 W, supporting applications with significant thermal demands.
This model employs an enhancement mode N-channel type.
The device supports a maximum gate-source voltage of -20 to +20 V.
It is suitable for industrial, automotive, power supply, and embedded electronics applications.
The country of origin for this MOSFET is India.
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