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| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 4.6mm |
| Length | 10.75mm |
| Model | STB16NF06LT4 |
| Width | 10.4mm |
| Mount Type | Surface |
| Series | STripFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 16A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 100mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 45W |
| Typical Gate Charge Qg @ Vgs | 7.3nC |
| Maximum Gate Source Voltage Vgs | -16, +16V |
| Forward Voltage Vf | 1.3V |
STMicroelectronics STB16NF06LT4 is a high-quality N-Channel STripFET MOSFET engineered for robust electronic and power applications. This device supports a continuous drain current of up to 16 A and withstands a maximum drain-source voltage of 60 V, making it suitable for demanding power switching and amplification tasks in industrial, electronic components, and semiconductor systems.
Housed in a TO-263 surface-mount package, this MOSFET offers excellent thermal performance with a maximum power dissipation of 45 watts. Its enhancement channel mode combined with a low maximum drain-source resistance of 100 milliohms ensures efficient conduction and reduced power losses.
Designed for reliability across a wide operating temperature range from -55°C to 175°C, the STB16NF06LT4 caters to use cases in power electronics, electronic manufacturing, and embedded circuit design. The device accommodates typical gate charge of 7.3 nC and gate-source voltage from -16 V to +16 V, supporting precise gate control.
Equipped with a TO-263 package suitable for surface mounting. Maximum continuous drain current of 16 A enables handling of high load currents. High power dissipation capacity of 45 W facilitates durable operation under intense electrical stress.
Compact package dimensions ensure efficient PCB utilization. Device meets industrial and electronic component requirements for power management. Forward voltage of 1.3 V optimizes energy efficiency during switching. Operating temperature range of -55°C to 175°C ensures functionality in harsh environments.
Typical gate charge of 7.3 nC allows fast switching transitions. Support for gate-source voltage between -16 V and +16 V enables broad control flexibility. Low drain-source resistance minimizes conduction losses and thermal buildup.
This N-Channel MOSFET is ideal for design engineers and manufacturers focused on power electronics, industrial machinery control, and semiconductor device integration. Incorporating the STB16NF06LT4 into your PCB assemblies assures efficient power switching with enhanced durability.
Discover more high-performance MOSFETs and discrete semiconductor components in the Electronics & Electricals category at EnvMart. Explore industry-leading STMicroelectronics products engineered for reliability and precision.
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