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STMicroelectronics STripFET N-Channel MOSFET 60 V, 16 A, 45 W Power Dissipation, TO-263 Package STB16NF06LT4

Category MOSFET Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 4.6mm
Length 10.75mm
Model STB16NF06LT4
Width 10.4mm
Mount Type Surface
Series STripFET
Maximum Operating Temperature 175°C
Package Type TO-263
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 16A
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 100mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 45W
Typical Gate Charge Qg @ Vgs 7.3nC
Maximum Gate Source Voltage Vgs -16, +16V
Forward Voltage Vf 1.3V

Key Features

  • Equipped with a TO-263 package for efficient heat dissipation.
  • Operates at a maximum power dissipation of 45 watts for high-performance needs.
  • Features an enhancement channel mode for reliable switching.
  • Maximum drain-source resistance (Rds) of 100 milliohms ensures low conduction losses.
  • Designed to function in a temperature range from -55°C to 175°C for robust industrial use.
  • Typical gate charge of 7.3 nC enables fast switching performance.
  • Capable of gate-source voltage tolerance from -16 V to +16 V.
  • High maximum continuous drain current of 16 A supports demanding circuit requirements.

Product Description

STMicroelectronics STB16NF06LT4 is a high-quality N-Channel STripFET MOSFET engineered for robust electronic and power applications. This device supports a continuous drain current of up to 16 A and withstands a maximum drain-source voltage of 60 V, making it suitable for demanding power switching and amplification tasks in industrial, electronic components, and semiconductor systems.

Housed in a TO-263 surface-mount package, this MOSFET offers excellent thermal performance with a maximum power dissipation of 45 watts. Its enhancement channel mode combined with a low maximum drain-source resistance of 100 milliohms ensures efficient conduction and reduced power losses.

Designed for reliability across a wide operating temperature range from -55°C to 175°C, the STB16NF06LT4 caters to use cases in power electronics, electronic manufacturing, and embedded circuit design. The device accommodates typical gate charge of 7.3 nC and gate-source voltage from -16 V to +16 V, supporting precise gate control.

Equipped with a TO-263 package suitable for surface mounting. Maximum continuous drain current of 16 A enables handling of high load currents. High power dissipation capacity of 45 W facilitates durable operation under intense electrical stress.

Compact package dimensions ensure efficient PCB utilization. Device meets industrial and electronic component requirements for power management. Forward voltage of 1.3 V optimizes energy efficiency during switching. Operating temperature range of -55°C to 175°C ensures functionality in harsh environments.

Typical gate charge of 7.3 nC allows fast switching transitions. Support for gate-source voltage between -16 V and +16 V enables broad control flexibility. Low drain-source resistance minimizes conduction losses and thermal buildup.

This N-Channel MOSFET is ideal for design engineers and manufacturers focused on power electronics, industrial machinery control, and semiconductor device integration. Incorporating the STB16NF06LT4 into your PCB assemblies assures efficient power switching with enhanced durability.

Discover more high-performance MOSFETs and discrete semiconductor components in the Electronics & Electricals category at EnvMart. Explore industry-leading STMicroelectronics products engineered for reliability and precision.

STMicroelectronics STripFET N-Channel MOSFET 60 V, 16 A, 45 W Power Dissipation, TO-263 Package STB16NF06LT4
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Frequently Asked Questions

The maximum continuous drain current for this model is 16 A.

It has a maximum power dissipation of 45 watts.

The operating temperature range is from -55°C to 175°C.

The maximum drain-source voltage is 60 V.

The typical gate charge is 7.3 nC.

It can tolerate a gate-source voltage from -16 V to +16 V.

The maximum drain-source resistance (Rds) is 100 milliohms.

It is housed in a TO-263 surface-mount package.

The dimensions are 10.75 mm in length, 10.4 mm in width, and 4.6 mm in height.

This model features an enhancement channel type.

The forward voltage is 1.3 V.

It is suitable for power switching and amplification tasks in industrial and electronic components.

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