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STMicroelectronics MDmesh N-Channel MOSFET, 17 A, 650 V Enhancement Mode, 3-Pin TO-220 STF24NM60N
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 16.4mm |
| Length | 10.4mm |
| Model | STF24NM60N |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | MDmesh |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 17A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 190mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 30W |
| Typical Gate Charge Qg @ Vgs | 46nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.6V |
Key Features
- This MOSFET features an enhancement mode channel for optimal switching performance.
- It comes in a 3-pin TO-220 through-hole package suitable for industrial applications.
- Maximum power dissipation is 30 W, supporting high-power use cases reliably.
- Gate charge is low, at 46 nC typical, enabling efficient switching operations.
- Operates across a wide temperature range from -55°C to 150°C for enhanced durability.
- Its drain-source resistance is 190 mΩ maximum, ensuring efficient conduction.
- Designed without automotive standards but excels in power control and conversion electronics.
- Compact dimensions (16.4 mm height, 10.4 mm length, 4.6 mm width) allow versatile PCB integration.
Product Description
STMicroelectronics STF24NM60N is a MDmesh N-Channel Enhancement MOSFET designed for high-efficiency power switching with a maximum continuous drain current of 17 A and maximum drain-source voltage of 650 V. Packaged in a durable TO-220 through-hole format with 3 pins, this device supports demanding power electronics applications.
The transistor features a low gate charge (46 nC typical at Vgs), which reduces switching losses and enhances performance in fast-switching environments. It delivers maximum power dissipation of 30 W, making it suitable for power control modules in industrial, commercial, and automotive-adjacent electronics.
Operational capability spans from -55°C to 150°C, providing reliable performance under wide thermal conditions. The maximum drain-source resistance at 190 mΩ ensures minimized conduction losses, optimizing energy efficiency.
This MOSFET is optimized for use in switching power supplies, motor drivers, DC-DC converters, and other semiconductor-controlled power applications. Its compact size facilitates easy integration into densely populated printed circuit boards (PCBs).
This product utilizes MDmesh technology for superior switching efficiency and robustness. N-channel enhancement mode optimizes fast and efficient switching. 3-pin TO-220 package supports through-hole mounting and heat dissipation.
High maximum continuous drain current (17 A) enables high power applications. Wide temperature operation range from -55°C to 150°C. Low gate charge reduces switching losses for improved circuit performance. Compact form factor with dimensions 16.4 × 10.4 × 4.6 mm.
This MOSFET transistor is ideal for industrial, laboratory, HVAC, manufacturing, and power electronics applications. It is categorized under MOSFET discrete semiconductors and manufactured to meet standard quality controls without automotive standard certification.
EnvMart offers this component for precision power electronics design projects requiring robust performance and reliability from trusted STMicroelectronics semiconductor technology.
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Frequently Asked Questions
The maximum continuous drain current for this MOSFET is 17 A.
It has a maximum drain-source voltage rating of 650 V.
The typical gate charge is 46 nC at Vgs.
The dimensions of this model are 16.4 mm in height, 10.4 mm in length, and 4.6 mm in width.
The maximum power dissipation is 30 W.
It operates across a wide temperature range from -55°C to 150°C.
The maximum drain-source resistance is 190 mΩ.
It comes in a 3-pin TO-220 through-hole package.
This MOSFET is suitable for power control modules, switching power supplies, motor drivers, and DC-DC converters.
The channel type of this model is N-channel enhancement mode.
The maximum gate-source voltage is -30 V to +30 V.
It uses a through-hole mounting type.
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