onsemi Type P-Channel MOSFET 20 V 950 mA Enhancement Mode 6-Pin SOT-563 NTZS3151P

onsemi NTZS3151P Type P-Channel MOSFET is a highly reliable semiconductor component designed for low power electronic applications. It operates with a maximum drain-source voltage of 20 V and continuous drain current up to 950 mA, making it ideal for compact power switching and amplification tasks.

The device uses enhancement mode channel technology, ensuring efficient switching characteristics with low leakage. Its 6-pin SOT-563 surface mount package enables high-density PCB layouts in industrial and commercial electronics.

With a maximum power dissipation rating of 210 mW and capability to function between -55°C to 150°C, it suits demanding environments including industrial controls, instrumentation, and automotive electronics.

The typical gate charge of 5.6 nC at Vgs along with a maximum drain-source resistance of 240 mΩ enhances switching responsiveness and reduces power loss. Compact size with 1.7 mm length, 1.3 mm width, and 600 μm height facilitates integration in space-constrained designs.

This P-channel MOSFET is applicable in PCB power management, signal switching, and low voltage DC circuits commonly found in industrial, automotive, and consumer electronic devices.

This MOSFET is packaged in a 6-pin SOT-563 surface mount package. Maximum power dissipation is 210 mW with a maximum operating temperature up to 150°C. It has a typical gate charge of 5.6 nC at Vgs and maximum drain-source resistance of 240 mΩ.

Supports operating temperature range from -55°C minimum to 150°C maximum. Typical forward voltage is -0.9 V with maximum gate source voltage ratings of -8 V to +8 V. Compact dimensions: length 1.7 mm, width 1.3 mm, and height 600 μm.

Designed for enhancement mode applications requiring low voltage, low current switching. Explore more on MOSFET components and discrete semiconductors in the Electronics & Electricals category at EnvMart for versatile industrial and commercial applications.