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onsemi P-Channel Enhancement Mode MOSFET, 7.5 A, 30 V, SOT-223, 4-Pin NDT456P
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.7mm |
| Length | 6.7mm |
| Model | NDT456P |
| Width | 3.7mm |
| Mount Type | Surface |
| Series | NDT |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 4 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 7.5A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 54mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 3W |
| Typical Gate Charge Qg @ Vgs | 47nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.2V |
Key Features
- High-density cell design that minimizes on-state resistance.
- Maximum continuous drain current of 7.5 amperes enhances load handling.
- Maximum drain-source voltage rating of 30 volts suitable for varied applications.
- Low on-resistance of 54 milliohms reduces power losses.
- Maximum power dissipation rated at 3 watts for robust performance.
- Wide operating temperature range from -65°C to 150°C enables industrial reliability.
- Compact SOT-223 surface mount package with 4 pins and small dimensions.
- Typical gate charge of 47 nanocoulombs provides fast switching capabilities.
Product Description
onsemi NDT456P is a P-Channel Enhancement Mode MOSFET featuring a maximum continuous drain current of 7.5 amperes and a maximum drain-source voltage of 30 volts. Housed in a compact 4-pin SOT-223 surface-mount package, this device is designed using ON Semiconductor's proprietary high cell density DMOS technology. This design ensures low on-state resistance, superior ruggedness, and reliable fast switching, making it suitable for demanding electronic component applications.
The device operates effectively over a broad temperature range from -65°C to 150°C, which supports use in harsh industrial and automotive environments. Its voltage-controlled P-Channel small signal switch architecture provides excellent switching behavior, essential for load switching, DC/DC converters, battery protection, power management control, and DC motor control.
Key technical attributes include a maximum power dissipation of 3 watts, maximum gate-source voltage of -20 V to +20 V, and a typical gate charge of 47 nC at Vgs. The device's forward voltage is -1.2 V, and it has a compact footprint with a length of 6.7 mm, width of 3.7 mm, and height of 1.7 mm, which enables easy PCB layout optimization.
Applications for the onsemi NDT456P MOSFET span various industrial sectors including power electronics, automotive control systems, manufacturing, and electronic instrumentation. Its reliable switching and rugged performance make it a suitable choice for advanced power management and switching roles.
Voltage controlled P-Channel small signal switch ensuring efficient operation. High-density cell design that minimizes on-state resistance. Maximum continuous drain current of 7.5 amperes enhances load handling. Maximum drain-source voltage rating of 30 volts suitable for varied applications.
Low on-resistance of 54 milliohms reduces power losses. Maximum power dissipation rated at 3 watts for robust performance. Wide operating temperature range from -65°C to 150°C enables industrial reliability. Compact SOT-223 surface mount package with 4 pins and small dimensions.
Typical gate charge of 47 nanocoulombs provides fast switching capabilities. Forward voltage of -1.2 volts supports efficient conduction. Discover a wide range of MOSFETs and discrete semiconductor components in the Electronics & Electricals category on EnvMart for various industrial and commercial applications.
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Frequently Asked Questions
The maximum continuous drain current of this model is 7.5 amperes.
It has a maximum drain-source voltage rating of 30 volts.
The on-resistance is rated at 54 milliohms, which helps reduce power losses.
It operates effectively over a wide temperature range from -65°C to 150°C.
This model is housed in a compact SOT-223 surface mount package with 4 pins.
The typical gate charge is 47 nanocoulombs, providing fast switching capabilities.
The maximum power dissipation is rated at 3 watts.
The forward voltage is -1.2 volts, which supports efficient conduction.
It features a P-channel enhancement mode architecture.
The maximum gate-source voltage is -20 V to +20 V.
This MOSFET is suitable for applications in power electronics, automotive control systems, and electronic instrumentation.
The dimensions are 6.7 mm in length, 3.7 mm in width, and 1.7 mm in height.
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