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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 4.57mm |
| Length | 10.31mm |
| Model | IPB017N06N3GATMA1 |
| Width | 9.45mm |
| Mount Type | Surface |
| Series | OptiMOS 3 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 7 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 180A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 1.7mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 250W |
| Typical Gate Charge Qg @ Vgs | 206nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
Infineon IPB017N06N3GATMA1 is an OptiMOS 3 series N-Channel MOSFET designed to provide robust performance in power electronics circuits. Rated for a maximum drain-source voltage of 60 V and a continuous drain current of 180 A, this device is optimized for high-efficiency power conversion in compact surface mount packages.
The TO-263 7-pin package enhances thermal management, allowing power dissipation up to 250 W, suitable for demanding applications such as switching mode power supplies (SMPS) and DC/DC converters. This MOSFET features an enhancement-type channel mode and a very low on-resistance of 1.7 mΩ, helping reduce conduction losses and improve overall device efficiency.
Designed to operate reliably within a temperature range of -55°C to 175°C, the device supports robust industrial environments. With a typical gate charge of 206 nC and maximum gate-source voltage tolerance of ±20 V, it ensures fast and stable switching behavior. The device's low forward voltage of 1.2 V further aids in reducing power losses.
The IPB017N06N3GATMA1 is lead-free, aligning with environmental directives for safer electronic manufacturing. Although not automotive certified, it serves well in industrial, computing, power management, and energy-efficient design applications.
Equipped with a 7-pin TO-263 surface mount package for efficient heat dissipation. High continuous drain current supports heavy load applications. Low on-resistance reduces conduction losses for improved power efficiency.
Wide temperature rating ensures reliable operation under harsh conditions. Lead-free for compliance with RoHS environmental standards. Optimized for use in DC/DC converters and switching power supplies. Fast switching enhances performance in energy-efficient power designs.
Explore the extensive Infineon MOSFET range at EnvMart for advanced semiconductor solutions catering to industrial, manufacturing, electronics, and power management sectors.
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