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Infineon OptiMOS 3 N-Channel MOSFET 21 A 150 V Enhancement Mode 8-Pin TSDSON BSZ520N15NS3GATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.1mm |
| Length | 3.4mm |
| Model | BSZ520N15NS3GATMA1 |
| Width | 3.4mm |
| Mount Type | Surface |
| Series | OptiMOS 3 |
| Maximum Operating Temperature | 150°C |
| Package Type | TSDSON |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 21A |
| Maximum Drain Source Voltage Vds | 150V |
| Maximum Drain Source Resistance Rds | 52mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 57W |
| Typical Gate Charge Qg @ Vgs | 8.7nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 900mV |
Key Features
- The device features an 8-pin TSDSON package for surface mounting.
- It employs enhancement mode operation for reliable control.
- Maximum drain-source resistance is 52 milliohms to minimize conduction losses.
- Typical gate charge at gate-source voltage is 8.7 nC for fast switching.
- Designed to handle a maximum power dissipation of 57 W under operating conditions.
- Operates efficiently across a temperature range from -55°C to 150°C.
- Maximum gate-source voltage rating is ±20 V for robust gate control.
- Compact dimensions of 3.4 mm length, 3.4 mm width, and 1.1 mm height support space-constrained applications.
Product Description
Infineon BSZ520N15NS3GATMA1 is an OptiMOS 3 N-Channel MOSFET designed to deliver high reliability and efficiency in electronic switching applications. It supports a maximum continuous drain current of 21 A and a maximum drain-source voltage of 150 V, making it suitable for various power electronics uses.
Constructed in an 8-pin TSDSON surface-mount package, this device offers compactness and ease of integration on modern PCBs. The enhancement mode operation ensures reliable control and switching performance.
Key parameters include a low maximum drain-source resistance of 52 milliohms, which reduces conduction losses, and a typical gate charge of 8.7 nC at gate-source voltage, which enables fast switching responses. It supports maximum power dissipation of 57 watts under normal operating conditions.
Engineered to operate across a wide temperature range from -55°C to 150°C, the MOSFET is suitable for demanding industrial, automotive, and power management applications where temperature variations are significant. The device also maintains high gate voltage tolerance with a maximum gate-source voltage rating of +20/-20 V.
The forward voltage drop, an important factor in efficiency, stands at approximately 900 mV. Its physical dimensions of 3.4 mm length, 3.4 mm width, and 1.1 mm height allow it to be embedded in compact designs.
The 8-pin TSDSON package supports surface mount applications. Wide operating temperature range from -55°C to 150°C ensures reliability in harsh environments. Low Rds(on) reduces power dissipation and improves efficiency.
High power dissipation rating maximizes operational robustness. Fast switching enabled by low gate charge improves performance in high-frequency circuits. Stable gate voltage tolerance protects against voltage transients.
Compact form factor suits modern electronic assembly standards.
This MOSFET is ideal for power management, industrial electronics, automotive systems, and other applications requiring efficient switching components. Explore more high-quality MOSFET products by Infineon on EnvMart to meet your electronic component needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 21 A.
It has a maximum drain-source voltage rating of 150 V.
This device comes in an 8-pin TSDSON package for surface mounting.
The maximum power dissipation under normal operating conditions is 57 W.
The typical gate charge at gate-source voltage is 8.7 nC, enabling fast switching.
The maximum gate-source voltage rating is ±20 V.
The dimensions are 3.4 mm in length, 3.4 mm in width, and 1.1 mm in height.
The maximum drain-source resistance is 52 milliohms, which helps minimize conduction losses.
It operates efficiently across a temperature range from -55°C to 150°C.
This model is suitable for power management, industrial electronics, and automotive systems.
The forward voltage drop is approximately 900 mV.
It features an N-channel configuration with enhancement mode operation.
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