Infineon OptiMOS 3 N-Channel MOSFET, 55 A, 80 V, Enhancement Mode, 8-Pin TDSON BSC123N08NS3GATMA1

Infineon BSC123N08NS3GATMA1 is an OptiMOS 3 N-Channel MOSFET designed for power switching and conversion in industrial and electronic applications. It belongs to the OptiMOS 3 series, optimized for high performance and efficient operation in demanding environments. The device supports a maximum continuous drain current of 55 A and withstands voltages up to 80 V, meeting next-generation voltage regulation standards for computing and industrial systems.

This MOSFET features an 8-pin TDSON surface mount package that provides flexibility in compact PCB layouts. The enhancement mode channel ensures reliable switch behavior, while the low typical gate charge of 19 nC contributes to faster switching speeds and reduced power losses, ideal for switch mode power supplies (SMPS) and DC/DC converters.

The device can dissipate up to 66 W of power and operates over a wide temperature range from -55°C to 150°C, allowing use in harsh industrial and commercial environments. Compact physical dimensions (1.1 mm height, 5.35 mm length, 6.1 mm width) preserve board space without compromising performance. Its low on-resistance of 24 mΩ and forward voltage of 1.2 V enhance efficiency and thermal management.

Although not automotive qualified, this MOSFET meets JEDEC standards for semiconductor devices, ensuring reliability and quality for laboratory, industrial, and manufacturing applications. Applications include power management in computing hardware, telecommunications equipment, and energy-efficient power supplies.

Supports 55 A continuous drain current for high power requirements. Rated 80 V maximum drain-source voltage for robust operation. Low gate charge of 19 nC for efficient, fast switching. Compact 8-pin TDSON package suitable for surface mount assembly.

Wide operating temperature capability from -55°C to 150°C for industrial use. Power dissipation rating of 66 W to manage thermal loads. Compact form factor preserves PCB space with low profile design. Low on-resistance of 24 mΩ reduces conduction losses.

Reliable enhancement mode N-channel operation optimized for DC/DC conversion.

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