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onsemi PowerTrench Type P-Channel MOSFET, 6.7 A, 12 V Enhancement Mode, 3-Pin TO-252 Package FDD306P
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 2.39mm |
| Length | 6.73mm |
| Model | FDD306P |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 6.7A |
| Maximum Drain Source Voltage Vds | 12V |
| Maximum Drain Source Resistance Rds | 90mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 52W |
| Typical Gate Charge Qg @ Vgs | 15nC |
| Maximum Gate Source Voltage Vgs | -8, +8V |
| Forward Voltage Vf | -1.2V |
Key Features
- High efficiency with low gate charge of 15 nC for fast switching.
- Maximum power dissipation rating of 52 W supports demanding load conditions.
- Surface mount TO-252 package suitable for compact PCB layouts.
- Operates over a wide temperature range from -55°C to 175°C.
- Low drain-source resistance of 90 milliohms minimizes conduction losses.
- Soft body diode reduces switching noise and eliminates snubber circuits.
- Maximum gate source voltage tolerance of -8 to +8 V provides robust gate drive.
Product Description
onsemi FDD306P is a PowerTrench® Type P-Channel MOSFET designed for efficient power switching applications. It supports a maximum continuous drain current of 6.7 A at a drain-source voltage rating of 12 V in an enhancement channel mode, making it suitable for low voltage switching and control circuits. Housed in a compact 3-pin TO-252 surface mount package, it optimizes PCB space and thermal dissipation.
This MOSFET features a low typical gate charge of 15 nC which enables fast switching speeds and improved system efficiency. Its maximum power dissipation of 52 W allows for reliable operation even under considerable load conditions. The device maintains stable operation across a temperature range from -55°C to 175°C, ideal for industrial, automotive, and commercial electronics systems.
The PowerTrench® technology employed incorporates a shielded-gate structure to balance charge and reduce the Figure of Merit (FOM), enhancing performance over previous generations. Its soft body diode characteristic reduces switching noise and can eliminate the need for snubber circuits, simplifying design and enhancing efficiency.
Physical dimensions include a length of 6.73 mm, width of 6.22 mm, and height of 2.39 mm, suitable for compact electronic assembly. It offers a maximum drain-source resistance of 90 milliohms, minimizing conduction losses in switching applications. The maximum gate-source voltage ratings of -8 V to +8 V provide robust gate control reliability.
High efficiency with low gate charge of 15 nC for fast switching. Maximum power dissipation of 52 W supports demanding load conditions. Compact TO-252 surface mount package optimizes board layout. Wide operating temperature from -55°C to 175°C for harsh environments.
Low drain-source resistance of 90 milliohms reduces conduction losses. Soft body diode reduces switching noise and circuit complexity. Robust gate drive voltage tolerance of -8 to +8 V ensures control stability. Physical size: 6.73 mm (L) x 6.22 mm (W) x 2.39 mm (H).
This device is widely used in industrial automation, power supply regulation, automotive control systems, consumer electronics, and other applications requiring efficient P-channel MOSFET switches. Explore a comprehensive range of MOSFETs and semiconductor components in the Electronics & Electricals category at EnvMart for your projects and manufacturing needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 6.7 A.
It has a maximum drain-source voltage rating of 12 V.
The typical gate charge is 15 nC, allowing for fast switching speeds.
The maximum power dissipation rating is 52 W, supporting demanding load conditions.
The dimensions are 6.73 mm in length, 6.22 mm in width, and 2.39 mm in height.
It operates over a wide temperature range from -55°C to 175°C.
The maximum gate-source voltage tolerance is -8 V to +8 V.
This model comes in a compact 3-pin TO-252 surface mount package.
The maximum drain-source resistance is 90 milliohms, minimizing conduction losses.
It is suitable for industrial automation, power supply regulation, automotive control systems, and consumer electronics.
It employs PowerTrench® technology, which incorporates a shielded-gate structure to enhance performance.
The soft body diode reduces switching noise and can eliminate the need for snubber circuits, simplifying design.
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