Infineon OptiMOS 3 N-Channel MOSFET, 23 A Continuous Drain Current, 80 V Drain Source Voltage, 8-Pin TDSON BSC340N08NS3GATMA1

Infineon BSC340N08NS3GATMA1 is an OptiMOS 3 N-Channel MOSFET engineered to provide superior switching performance and energy efficiency in electronic power control circuits. Operating at a maximum continuous drain current of 23 A and a drain-source voltage rating of 80 V, it suits a broad range of industrial and commercial applications including power supplies, DC/DC converters, and motor control.

The device features an 8-pin TDSON surface-mount package with compact physical dimensions of 1.1 mm height, 5.35 mm length, and 6.1 mm width, enabling space-efficient PCB layouts. Its low drain-source resistance of 66 mΩ minimizes conduction losses, contributing to improved system efficiency.

Tested for thermal stability with maximum operating temperature up to 150°C and a minimum rated temperature of -55°C, this MOSFET is highly reliable for demanding environments. The moderate gate charge of 6.8 nC combined with a gate-source voltage range of -20 V to +20 V supports reduced switching losses and high-speed operation.

OptiMOS 3 technology delivers best-in-class switching efficiency and power density. Low on-resistance reduces power dissipation during conduction. High maximum power dissipation rating of 32 W ensures durability. Wide operating temperature range suits automotive and industrial use cases.

Compact TDSON package simplifies integration on multilayer boards. Suitable for switching power supplies and power management systems. RoHS compliant with lead-free plating for environmental friendliness. Non-automotive standard but suited for general industrial electronic systems.

This component is ideal for engineers and designers seeking efficient and compact power MOSFET solutions in industrial, commercial, and electronic manufacturing settings. Explore EnvMart's extensive range of semiconductor components for complete design solutions.