$4.31
$4.18
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Infineon CoolMOS C6 N-Channel MOSFET, 20 A, 650 V Enhancement Mode, TO-247 Package IPW60R190C6FKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 21.1mm |
| Length | 16.13mm |
| Model | IPW60R190C6FKSA1 |
| Width | 5.21mm |
| Mount Type | Through Hole |
| Series | CoolMOS C6 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 20A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 190mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 151W |
| Typical Gate Charge Qg @ Vgs | 63nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 900mV |
Key Features
- Features a TO-247 package suitable for through-hole mounting.
- Enhancement mode operation ensures efficient switching performance.
- Maximum power dissipation is rated at 151 W.
- Maximum drain-source resistance (Rds) of 190 mΩ guarantees low conduction losses.
- Operating temperature range from -55°C to 150°C supports harsh environments.
- Typical gate charge of 63 nC at Vgs ensures fast switching speeds.
- Maximum gate source voltage rating of ±20 V for reliable driving capability.
- Forward voltage drop of 900 mV enables efficient conduction.
Product Description
The Infineon IPW60R190C6FKSA1 is part of the CoolMOS C6 series of N-Channel MOSFETs, designed to provide high efficiency and reliability in power switching applications. With a maximum continuous drain current of 20 A and drain-source voltage rating of 650 V, this enhancement mode MOSFET is optimized for robust electrical performance.
Encapsulated in a TO-247 package, suitable for through-hole mounting, it offers compact dimensions of 21.1 mm in height, 5.21 mm in width, and 16.13 mm in length, making it easy to integrate into power electronic circuits.
The device delivers a maximum power dissipation of 151 W, with a low on-resistance (Rds) of 190 mΩ to minimize conduction losses. The typical gate charge of 63 nC at gate-source voltage ensures fast and efficient switching suitable for power converters and motor drives.
Its operating temperature range spans from -55°C to 150°C, allowing use in a variety of industrial environments requiring durability and high thermal stability. The maximum gate-source voltage of ±20 V provides robust gate drive tolerance.
This MOSFET is particularly suited for industrial power supplies, inverters, and other power management applications where high efficiency and reliability are critical. It is not automotive grade certified and targets electronic component applications in manufacturing, industrial equipment, and power management systems.
TO-247 package with through-hole mount for reliable installation. Low on-resistance ensures reduced power losses and improved efficiency. Wide operating temperature range for demanding industrial environments. Fast switching capabilities optimize power conversion performance.
Compact size supports efficient PCB layout and space saving. Robust gate voltage tolerance improves device resilience in power electronics. Part of Infineon’s CoolMOS C6 series delivering advanced MOSFET technology. Explore further components and solutions in our Infineon semiconductor range at EnvMart for your electronic system designs and power management needs.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current for this model is 20 A.
This MOSFET has a maximum drain-source voltage rating of 650 V.
It can handle a maximum power dissipation of 151 W.
The typical gate charge at gate-source voltage (Vgs) is 63 nC.
The operating temperature range spans from -55°C to 150°C.
This MOSFET is encapsulated in a TO-247 package suitable for through-hole mounting.
The maximum gate-source voltage rating is ±20 V.
The dimensions are 21.1 mm in height, 5.21 mm in width, and 16.13 mm in length.
The maximum drain-source resistance (Rds) is 190 mΩ.
It is particularly suited for industrial power supplies, inverters, and other power management applications.
This model has a pin count of 3.
This device utilizes an N-channel configuration.
Related Products
$23.16
$20.22
-12.7%
Other Products from this brand
$19.84
$19.24
-3%
New
Recently Viewed Products
$23.16
$20.22
-12.7%
New
$4.31
$4.18
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent