Taiwan Semiconductor Silicon Junction Single Switching Diode, 0.8 A Forward Current, 600 V Peak Reverse Voltage RS1JL R2

Taiwan Semiconductor RS1JL R2 is a silicon junction single switching diode optimized for surface mount technology (SMT) applications using the compact Sub SMA package.

This diode supports a maximum forward current of 0.8 amps and provides a peak reverse repetitive voltage rating of 600 volts, making it suitable for robust power management in electronic circuits.

With a low maximum forward voltage of 1.3 volts and a peak non-repetitive forward surge current of 30 amps, it ensures efficient conduction while tolerating high surge conditions.

The device features a fast peak reverse recovery time of 250 nanoseconds, beneficial for high-frequency switching and signal rectification in industrial, electronic component manufacturing, and power conversion applications.

Its small footprint with dimensions of 2.9 mm length, 1.9 mm width, and 1.43 mm height facilitates dense PCB layouts and compact electronic device designs. The diode reliably operates over a broad temperature range from -55°C to 150°C, suitable for demanding environments including industrial and automotive electronics.

Maximum forward current of 0.8 amps. Peak reverse repetitive voltage of 600 volts. Forward voltage drop maximum at 1.3 volts. Peak surge current up to 30 amps. Fast reverse recovery time of 250 ns. Compact Sub SMA surface mount package.

Operating temperature from -55°C to 150°C. Length 2.9 mm, Width 1.9 mm, Height 1.43 mm.

This Taiwan Semiconductor diode is ideal for use in electronic devices requiring efficient, reliable switching capability and is widely applicable in semiconductor, industrial electronics, power management, and signal processing equipment. Explore the Semiconductor Switching Diodes category on EnvMart for additional components.