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Taiwan Semiconductor Silicon Junction, Single, 3 A, 2-Pin 200 V DO-214AA ES3D V7G

Specifications

Country of Origin China
Brand Taiwan Semiconductor
Height 2.62mm
Length 7.11mm
Model ES3D V7G
Width 6.22mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type DO-214AA
Sub Type Silicon Junction
Minimum Operating Temperature -55°C
Pin Count 2
Diode Configuration Single
Peak Non-Repetitive Forward Surge Current Ifsm 100A
Maximum Forward Voltage Vf 950mV
Peak Reverse Recovery Time trr 35ns
Maximum Forward Current If 3A
Maximum Peak Reverse Repetitive Voltage Vrrm 200V

Key Features

  • Single diode configuration designed for surface mount applications.
  • Maximum forward current rating of 3 amperes ensures robust performance.
  • Peak reverse recovery time of 35 nanoseconds supports efficient switching.
  • Package dimensions of 7.11 mm length, 6.22 mm width, and 2.62 mm height.
  • Operating temperature range from -55°C to 150°C for versatile usage.
  • Maximum forward voltage of 950 millivolts under full load conditions.
  • Peak non-repetitive forward surge current rating of 100 amperes for transient tolerance.
  • Manufactured in China with standard DO-214AA packaging supplied on reel.

Product Description

Taiwan Semiconductor ES3D V7G silicon junction single diode is a high-performance switching diode designed for surface mount technology applications. It supports a maximum forward current of 3 amperes and a maximum peak reverse repetitive voltage of 200 volts, making it suitable for power rectification and switching tasks in electronic circuits.

The diode comes in a compact DO-214AA package measuring 7.11 mm in length, 6.22 mm in width, and 2.62 mm in height. This form factor is ideal for automated PCB assembly processes and efficient space utilization.

Its fast peak reverse recovery time of 35 ns ensures minimal switching losses, and the peak non-repetitive forward surge current rating of 100 amperes allows for high transient current tolerance. The device operates reliably across a broad temperature range from -55°C up to 150°C, suitable for industrial, automotive, and power supply applications.

The maximum forward voltage drop at rated current is 950 millivolts, contributing to efficient power handling and reduced heat dissipation. This diode is RoHS compliant and packaged on reels to facilitate high-volume manufacturing processes.

Single diode for switching and rectification in power electronics. Surface mount DO-214AA package for automated assembly. Maximum forward current of 3 A suitable for medium power applications. Peak reverse voltage of 200 V ensures protection under voltage spikes.

Fast switching with 35 ns reverse recovery time for efficient operation. Wide temperature range (-55°C to 150°C) for varied environment use. High surge current capability to handle transient conditions. Manufactured in China and packed on reels for production efficiency.

This switching diode is ideal for use in automotive electronics, power supplies, industrial machinery, and general electronic circuit protection. The reliable silicon junction construction ensures longevity and performance stability under demanding electrical environments. Browse more Semiconductor Switching Diodes and electronic components at EnvMart to find compatible parts for your design and production needs.

Taiwan Semiconductor Silicon Junction, Single, 3 A, 2-Pin 200 V DO-214AA ES3D V7G
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