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Taiwan Semiconductor Silicon Junction Rectifier Diode Single 3A 500V 2-Pin DO-214AA ES3H V7G

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Taiwan Semiconductor Silicon Junction Rectifier Diode Single 3A 500V 2-Pin DO-214AA ES3H V7G

Name: Taiwan Semiconductor Silicon Junction Rectifier Diode Single 3A 500V 2-Pin DO-214AA ES3H V7G
Brand: Taiwan Semiconductor
SKU: 372362
Price: 0.68 USD
Availability: InStock

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Category Semiconductor Switching Diode Brand Taiwan Semiconductor Condition New

Specifications

Country of Origin	China
Brand	Taiwan Semiconductor
Height	2.62mm
Length	7.11mm
Model	ES3H V7G
Width	6.22mm
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	DO-214AA
Sub Type	Silicon Junction
Minimum Operating Temperature	-55°C
Pin Count	2
Diode Configuration	Single
Peak Non-Repetitive Forward Surge Current Ifsm	100A
Maximum Forward Voltage Vf	1.7V
Peak Reverse Recovery Time trr	35ns
Maximum Forward Current If	3A
Maximum Peak Reverse Repetitive Voltage Vrrm	500V

Key Features

Single diode configuration suitable for rectification and switching applications.
Surface mount package type DO-214AA for compact PCB design.
High peak non-repetitive forward surge current capability up to 100A.
Wide operating temperature range from -55°C to 150°C for diverse environments.
Fast peak reverse recovery time of 35 nanoseconds.
Maximum forward voltage drop of 1.7V for efficient conduction.
Manufactured in China adhering to quality standards.

Product Description

Taiwan Semiconductor ES3H V7G silicon junction rectifier diode is designed for robust electronic applications requiring reliable switching and rectification. It supports a maximum forward current of 3A and a peak reverse voltage of 500V, making it ideal for power management circuits and industrial electronics.

This diode is packaged in a surface mount DO-214AA package with two pins, enabling space-saving PCB layouts and high-density assembly. Its peak non-repetitive forward surge current capacity of 100A provides protection against transient surges in power applications.

Operating reliably between -55°C and 150°C, the device suits demanding environments including industrial machinery, power converters, and communication equipment. The fast peak reverse recovery time of 35ns reduces switching losses and improves overall efficiency in high-frequency circuits.

With a maximum forward voltage drop of 1.7V, the diode maintains efficient current conduction, reducing power dissipation. Compact physical dimensions (7.11mm length, 6.22mm width, 2.62mm height) allow it to be used in compact embedded systems and electronic assemblies.

Single diode configuration suitable for rectification and switching applications. Surface mount DO-214AA package type for excellent PCB integration. Supports peak forward surge current up to 100A for transient handling. Wide operating temperature range from -55°C to 150°C.

Fast peak reverse recovery time of 35 nanoseconds. Maximum forward voltage of 1.7V ensures low conduction losses. Compact dimensions: 7.11mm x 6.22mm x 2.62mm. Manufactured in China maintaining quality and reliability standards.

This Semiconductor Switching Diode is essential for industrial, electrical, and electronic assemblies requiring dependable power diode solutions. It fits well in electronics manufacturing, automotive electronics, power supplies, and communication hardware.

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