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| Country of Origin | China |
|---|---|
| Diameter | 2.7mm |
| Brand | Taiwan Semiconductor |
| Height | 2.7mm |
| Length | 5.2mm |
| Model | FR106G R0 |
| Width | 2.7mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | DO-41 |
| Sub Type | Silicon Junction |
| Minimum Operating Temperature | -55°C |
| Pin Count | 2 |
| Diode Configuration | Single |
| Peak Non-Repetitive Forward Surge Current Ifsm | 30A |
| Maximum Forward Voltage Vf | 1.3V |
| Peak Reverse Recovery Time trr | 500ns |
| Maximum Forward Current If | 1A |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 800V |
The Taiwan Semiconductor FR106G R0 is a silicon junction switching diode designed for electronic components and power connector applications. This single diode features a maximum forward current of 1 ampere and a peak reverse repetitive voltage of 800 volts, making it suitable for general rectification and switching purposes in industrial and commercial electronics.
The diode comes in a DO-41 through-hole mounting package with two pins, ensuring easy integration into PCBs for power management circuits. Its compact size with length of 5.2 mm and diameter and width of 2.7 mm makes it suitable for space-constrained designs.
Engineered to operate over a wide temperature range from -55°C to 150°C, the FR106G R0 diode can withstand demanding environmental conditions typically found in manufacturing, automotive, and industrial sectors. The device offers a maximum forward voltage drop of 1.3 volts and a peak non-repetitive forward surge current of 30 amperes, providing resilience against transient surges.
Key electrical parameter includes a fast peak reverse recovery time of 500 nanoseconds, which benefits switching speed and efficiency in power supplies and signal processing. Maximum forward current of 1 amperes. Peak reverse voltage of 800 volts.
Through-hole DO-41 package with 2 pins. Peak forward surge current of 30 amperes. Operating temperature from -55°C to 150°C. Forward voltage drop of 1.3 volts. Length 5.2 mm, diameter and width 2.7 mm. Peak reverse recovery time 500 nanoseconds.
High reliability from Taiwan Semiconductor manufacturing.
This diode is ideally suited for use in industrial electronic assemblies, power conversion equipment, and automotive electronic controls where reliable rectification and fast switching are essential. Its robust design and proven performance make it a dependable component choice for electronics engineers and manufacturers.
Explore the Electronics & Electricals Semiconductor Switching Diode category on EnvMart for related components and advanced semiconductor devices.
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