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Taiwan Semiconductor Silicon Junction Switching Diode 3 A 500 V 2-Pin DO-214AA ES3H V7G

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Taiwan Semiconductor Silicon Junction Switching Diode 3 A 500 V 2-Pin DO-214AA ES3H V7G

Name: Taiwan Semiconductor Silicon Junction Switching Diode 3 A 500 V 2-Pin DO-214AA ES3H V7G
Brand: Taiwan Semiconductor
SKU: 372363
Price: 0.8 USD
Availability: InStock

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Category Semiconductor Switching Diode Brand Taiwan Semiconductor Condition New

Specifications

Country of Origin	China
Brand	Taiwan Semiconductor
Height	2.62mm
Length	7.11mm
Model	ES3H V7G
Width	6.22mm
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	DO-214AA
Sub Type	Silicon Junction
Minimum Operating Temperature	-55°C
Pin Count	2
Diode Configuration	Single
Peak Non-Repetitive Forward Surge Current Ifsm	100A
Maximum Forward Voltage Vf	1.7V
Peak Reverse Recovery Time trr	35ns
Maximum Forward Current If	3A
Maximum Peak Reverse Repetitive Voltage Vrrm	500V

Key Features

This diode features a maximum forward current of 3 amperes.
It supports a peak reverse repetitive voltage of 500 volts suitable for robust switching operations.
The package type is compact DO-214AA with dimensions of 7.11 mm length, 6.22 mm width, and 2.62 mm height.
Its peak non-repetitive forward surge current is 100 amperes, enabling it to handle transient overloads.
Minimum and maximum operating temperatures range from -55°C to 150°C for reliable performance in harsh environments.
The peak reverse recovery time is 35 nanoseconds, allowing for fast switching speeds.
The maximum forward voltage is 1.7 volts, ensuring low forward voltage drop and power loss.
This component is surface-mountable to optimize PCB space usage and design.

Product Description

Taiwan Semiconductor ES3H V7G Silicon Junction Switching Diode is a discrete semiconductor device designed for switching applications requiring 3 ampere maximum forward current and 500 volts peak repetitive voltage. Encapsulated in a DO-214AA surface-mount package, the diode offers compact dimensions of 7.11 mm length, 6.22 mm width, and 2.62 mm height, making it well suited for high-density printed circuit boards.

This diode supports a peak non-repetitive forward surge current of 100 amperes, making it robust for handling transient surge conditions commonly encountered in industrial electronics and power supply circuits. The peak reverse recovery time of 35 nanoseconds enables efficient high-speed switching, minimizing switching losses and electromagnetic interference.

Operating temperature ranges from -55°C to 150°C ensure the diode performs reliably even in demanding environmental conditions found in industrial, automotive, or commercial electronic devices. The maximum forward voltage of 1.7 volts reduces conduction losses for improved energy efficiency.

Designed as a single silicon junction diode with two pins, it is ideal for use in rectification, voltage clamping, and signal switching applications in electronics manufacturing, industrial automation, power conversion, and telecommunications equipment.

This diode features a maximum forward current of 3 amperes. Peak reverse repetitive voltage rating of 500 volts. DO-214AA surface mount package for compact installation. Peak non-repetitive forward surge current of 100 amperes.

Operating temperature range from -55°C to 150°C. Peak reverse recovery time of 35 nanoseconds. Maximum forward voltage of 1.7 volts for efficiency. Package size dimensions: length 7.11 mm, width 6.22 mm, height 2.62 mm.

Applications include industrial electronics, power supplies, automotive electronics, and communication devices requiring durable and high-speed switching diodes. Taiwan Semiconductor’s ES3H V7G diode meets quality manufacturing standards with its China country of origin, ensuring reliable supply for commercial and industrial needs.

Explore our extensive range of semiconductor components and switching diodes at EnvMart for high-performance electronics design.

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