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Taiwan Semiconductor Silicon Junction Rectifier Diode Single 2 A 200 V DO-214AA ES2D R5

Specifications

Country of Origin China
Brand Taiwan Semiconductor
Height 2.61mm
Length 4.75mm
Model ES2D R5
Width 3.73mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type DO-214AA
Sub Type Silicon Junction
Minimum Operating Temperature -55°C
Pin Count 2
Diode Configuration Single
Peak Non-Repetitive Forward Surge Current Ifsm 50A
Maximum Forward Voltage Vf 950mV
Peak Reverse Recovery Time trr 35ns
Maximum Forward Current If 2A
Maximum Peak Reverse Repetitive Voltage Vrrm 200V

Key Features

  • Single silicon junction diode configuration for efficient rectification.
  • Maximum forward current rating of 2 amperes to handle moderate load currents.
  • Peak reverse repetitive voltage of 200 volts ensures reliable blocking performance.
  • Surface mount DO-214AA package type enables compact PCB layout.
  • Fast peak reverse recovery time of 35 nanoseconds for high-frequency switching applications.
  • Maximum forward voltage drop at 950 millivolts optimizes power efficiency.
  • Operating temperature range from -55°C to 150°C supports diverse environmental conditions.
  • Peak non-repetitive forward surge current rating of 50 amperes for transient robustness.

Product Description

Taiwan Semiconductor ES2D R5 is a high-quality silicon junction rectifier diode suitable for industrial and electronic applications requiring reliable switching and rectification performance. This single diode features a maximum forward current of 2 A, making it appropriate for moderate power circuits.

Encased in a surface mount DO-214AA package, it offers compact design dimensions with a length of 4.75 mm, width of 3.73 mm and height of 2.61 mm, facilitating dense PCB layouts. Its peak reverse repetitive voltage of 200 V provides robust blocking capability in circuits experiencing high voltage stresses.

The ES2D R5 diode also boasts a fast peak reverse recovery time of 35 ns which enhances efficiency in high-frequency switching environments, such as power supplies and motor controls. The maximum forward voltage drop of 950 mV reduces power losses during conduction. Designed to operate within a temperature range of -55°C to 150°C, it is suitable for demanding industrial conditions.

Its peak non-repetitive forward surge current of 50 A ensures the diode can withstand transient surges without failure, contributing to circuit longevity. Manufactured in China, it conforms to general semiconductor component standards but does not carry specific certifications.

Single silicon junction diode configuration for efficient rectification. Maximum forward current rating of 2 amperes to handle moderate load currents. Peak reverse repetitive voltage of 200 volts ensures reliable blocking performance.

Surface mount DO-214AA package type enables compact PCB layout. Fast peak reverse recovery time of 35 nanoseconds for high-frequency switching applications. Maximum forward voltage drop at 950 millivolts optimizes power efficiency.

Operating temperature range from -55°C to 150°C supports diverse environmental conditions. Peak non-repetitive forward surge current rating of 50 amperes for transient robustness. Compact dimensions: 4.75 mm length, 3.73 mm width and 2.61 mm height.

Manufactured to strict standards with country of origin China.

This Taiwan Semiconductor diode is widely used in electronics manufacturing, power management, and industrial control systems, providing dependable switching diode functionality. EnvMart offers this diode as a quality component for manufacturers and engineers seeking compact, robust surface-mount silicon junction rectifiers.

Browse the EnvMart Semiconductor Switching Diode category for similar high-quality diodes and related components from leading brands.

Taiwan Semiconductor Silicon Junction Rectifier Diode Single 2 A 200 V DO-214AA ES2D R5
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