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| Country of Origin | China |
|---|---|
| Brand | Taiwan Semiconductor |
| Height | 2.61mm |
| Length | 4.75mm |
| Model | ES2D R5 |
| Width | 3.73mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | DO-214AA |
| Sub Type | Silicon Junction |
| Minimum Operating Temperature | -55°C |
| Pin Count | 2 |
| Diode Configuration | Single |
| Peak Non-Repetitive Forward Surge Current Ifsm | 50A |
| Maximum Forward Voltage Vf | 950mV |
| Peak Reverse Recovery Time trr | 35ns |
| Maximum Forward Current If | 2A |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 200V |
Taiwan Semiconductor ES2D R5 is a high-quality silicon junction rectifier diode suitable for industrial and electronic applications requiring reliable switching and rectification performance. This single diode features a maximum forward current of 2 A, making it appropriate for moderate power circuits.
Encased in a surface mount DO-214AA package, it offers compact design dimensions with a length of 4.75 mm, width of 3.73 mm and height of 2.61 mm, facilitating dense PCB layouts. Its peak reverse repetitive voltage of 200 V provides robust blocking capability in circuits experiencing high voltage stresses.
The ES2D R5 diode also boasts a fast peak reverse recovery time of 35 ns which enhances efficiency in high-frequency switching environments, such as power supplies and motor controls. The maximum forward voltage drop of 950 mV reduces power losses during conduction. Designed to operate within a temperature range of -55°C to 150°C, it is suitable for demanding industrial conditions.
Its peak non-repetitive forward surge current of 50 A ensures the diode can withstand transient surges without failure, contributing to circuit longevity. Manufactured in China, it conforms to general semiconductor component standards but does not carry specific certifications.
Single silicon junction diode configuration for efficient rectification. Maximum forward current rating of 2 amperes to handle moderate load currents. Peak reverse repetitive voltage of 200 volts ensures reliable blocking performance.
Surface mount DO-214AA package type enables compact PCB layout. Fast peak reverse recovery time of 35 nanoseconds for high-frequency switching applications. Maximum forward voltage drop at 950 millivolts optimizes power efficiency.
Operating temperature range from -55°C to 150°C supports diverse environmental conditions. Peak non-repetitive forward surge current rating of 50 amperes for transient robustness. Compact dimensions: 4.75 mm length, 3.73 mm width and 2.61 mm height.
Manufactured to strict standards with country of origin China.
This Taiwan Semiconductor diode is widely used in electronics manufacturing, power management, and industrial control systems, providing dependable switching diode functionality. EnvMart offers this diode as a quality component for manufacturers and engineers seeking compact, robust surface-mount silicon junction rectifiers.
Browse the EnvMart Semiconductor Switching Diode category for similar high-quality diodes and related components from leading brands.
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