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| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 4.83mm |
| Length | 10.41mm |
| Model | IRF840SPBF |
| Width | 9.65mm |
| Mount Type | Surface |
| Series | IRF840S |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pay online using | Or choose to pay later via bank transfer |
| RS Stock No. | 708-4752Brand: VishayManufacturers Part No.: IRF840SPBFDistrelec Article No.: 304-36-067 |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 8A |
| Maximum Drain Source Voltage Vds | 500V |
| Maximum Drain Source Resistance Rds | 850mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 125W |
| Typical Gate Charge Qg @ Vgs | 63nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 2V |
Vishay IRF840SPBF N-Channel Power MOSFET is a high-voltage switching device rated for 8 A continuous drain current and 500 V maximum drain-source voltage. Housed in a TO-263 package, it enables surface-mount PCB attachment with effective thermal dissipation and reliable soldering, making it suitable for demanding power conversion systems.
This enhancement-mode MOSFET offers 125 W maximum power dissipation, supporting high power applications such as industrial power supplies, motor inverters, and high-voltage switch-mode power rectifiers. The low on-resistance of 850 mΩ reduces conduction losses and improves efficiency.
The device features a typical gate charge of 63 nC and a maximum gate-source voltage rating of ±20 V, allowing precise and safe switching control. It operates reliably within a wide junction temperature range from -55°C to 150°C, accommodating varied thermal environments.
Applications include high-voltage power-supply switching stages, motor-drive inverter front-ends, boost converters in industrial equipment, and switch-mode power-rectification modules. Although this device does not meet automotive standards, it is ideal for industrial and laboratory use requiring robust voltage and current handling.
The TO-263 package offers three pins and is designed for efficient surface mounting and heat dissipation on PCBs, enhancing reliability in industrial installations. Supports 8 A maximum continuous drain current. Rated for 500 V drain-source voltage.
Power dissipation capability of 125 W. Low Rds(on) of 850 mΩ minimizes conduction losses. Wide operating temperature range from -55°C to 150°C. Typical gate charge 63 nC for effective switching. ±20 V gate-source voltage tolerance for secure gate drive.
Surface mount TO-263 package with 3 pins for PCB integration.
Explore the Electronics & Electricals category on EnvMart for additional Power MOSFETs and associated semiconductor components from trusted brands like Vishay, optimized for industrial and laboratory applications.
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