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Vishay N-Channel Power MOSFET, 8 A Continuous Drain Current, 500 V Drain-Source Voltage, 125 W Power Dissipation IRF840SPBF

Category Power MOSFET Brand Vishay Condition New

Specifications

Country of Origin China
Brand Vishay
Height 4.83mm
Length 10.41mm
Model IRF840SPBF
Width 9.65mm
Mount Type Surface
Series IRF840S
Maximum Operating Temperature 150°C
Package Type TO-263
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
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RS Stock No. 708-4752Brand: VishayManufacturers Part No.: IRF840SPBFDistrelec Article No.: 304-36-067
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 8A
Maximum Drain Source Voltage Vds 500V
Maximum Drain Source Resistance Rds 850mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 125W
Typical Gate Charge Qg @ Vgs 63nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 2V

Key Features

  • Supports a maximum power dissipation of 125 W for robust power handling.
  • Features a TO-263 surface-mount package enabling reliable PCB assembly.
  • Offers low drain-source resistance of 850 mΩ to reduce conduction losses.
  • Typical gate charge of 63 nC allows predictable switching performance.
  • Operates across a wide temperature range from -55°C to 150°C.
  • Maximum gate-source voltage is ±20 V to ensure safe gate drive.
  • Suitable for industrial power supplies, motor-drive inverters, and boost converter stages.
  • Designed for use in surface-mount applications with high power and voltage requirements.

Product Description

Vishay IRF840SPBF N-Channel Power MOSFET is a high-voltage switching device rated for 8 A continuous drain current and 500 V maximum drain-source voltage. Housed in a TO-263 package, it enables surface-mount PCB attachment with effective thermal dissipation and reliable soldering, making it suitable for demanding power conversion systems.

This enhancement-mode MOSFET offers 125 W maximum power dissipation, supporting high power applications such as industrial power supplies, motor inverters, and high-voltage switch-mode power rectifiers. The low on-resistance of 850 mΩ reduces conduction losses and improves efficiency.

The device features a typical gate charge of 63 nC and a maximum gate-source voltage rating of ±20 V, allowing precise and safe switching control. It operates reliably within a wide junction temperature range from -55°C to 150°C, accommodating varied thermal environments.

Applications include high-voltage power-supply switching stages, motor-drive inverter front-ends, boost converters in industrial equipment, and switch-mode power-rectification modules. Although this device does not meet automotive standards, it is ideal for industrial and laboratory use requiring robust voltage and current handling.

The TO-263 package offers three pins and is designed for efficient surface mounting and heat dissipation on PCBs, enhancing reliability in industrial installations. Supports 8 A maximum continuous drain current. Rated for 500 V drain-source voltage.

Power dissipation capability of 125 W. Low Rds(on) of 850 mΩ minimizes conduction losses. Wide operating temperature range from -55°C to 150°C. Typical gate charge 63 nC for effective switching. ±20 V gate-source voltage tolerance for secure gate drive.

Surface mount TO-263 package with 3 pins for PCB integration.

Explore the Electronics & Electricals category on EnvMart for additional Power MOSFETs and associated semiconductor components from trusted brands like Vishay, optimized for industrial and laboratory applications.

Vishay N-Channel Power MOSFET, 8 A Continuous Drain Current, 500 V Drain-Source Voltage, 125 W Power Dissipation IRF840SPBF
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Frequently Asked Questions

The maximum continuous drain current for this model is 8 A.

It has a maximum drain-source voltage rating of 500 V.

The IRF840SPBF supports a maximum power dissipation of 125 W.

It features a low drain-source resistance of 850 mΩ, which helps reduce conduction losses.

The typical gate charge is 63 nC, allowing for predictable switching performance.

This model operates reliably within a wide temperature range from -55°C to 150°C.

The maximum gate-source voltage is ±20 V, ensuring safe gate drive.

It is housed in a TO-263 surface-mount package, designed for efficient PCB assembly.

The TO-263 package features 3 pins for connection.

This MOSFET is suitable for industrial power supplies, motor-drive inverters, and boost converter stages.

It complies with RoHS standards, ensuring it meets environmental regulations.

The channel type of this model is N-Channel, specifically designed as an enhancement-mode MOSFET.

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