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Toshiba TK N-Channel MOSFET, 40 A, 40 V Enhancement Mode, 3-Pin DP Surface Mount TK40P04M1(T6RSS-Q)

Category MOSFETs Brand Toshiba Condition New

Specifications

Country of Origin Japan
Brand Toshiba
Height 2.3mm
Length 10mm
Model TK40P04M1(T6RSS-Q)
Width 6.1mm
Mount Type Surface
Series TK
Maximum Operating Temperature 150°C
Package Type DP
Minimum Operating Temperature -55°C
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RS Stock No. 695-5928 Brand: [Toshiba](https://in.rsdelivers.com/brands/toshiba)Manufacturers Part No.: TK40P04M1(T6RSS-Q)
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 40A
Maximum Drain Source Voltage Vds 40V
Maximum Drain Source Resistance Rds 13.4mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 47W
Typical Gate Charge Qg @ Vgs 29nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.2V

Key Features

  • Features a 3-pin DP surface mount package for compact PCB designs.
  • Maximum drain source resistance (Rds) is 13.4 milliohms for efficient conduction.
  • Typical gate charge is 29 nC at Vgs for fast switching applications.
  • Supports maximum gate source voltage of -20 to +20 volts ensuring robust operation.
  • Power dissipation is rated at 47 watts allowing high power handling.
  • Operating temperature range is from -55°C to 150°C suitable for harsh environments.
  • Manufactured in Japan ensuring high-quality semiconductor standards.

Product Description

Toshiba TK40P04M1(T6RSS-Q) is a high-performance N-Channel Enhancement Mode MOSFET transistor designed for power switching and amplification applications. It supports a maximum continuous drain current of 40 amps and a maximum drain source voltage of 40 volts, making it suitable for medium power electronic circuits.

This MOSFET comes in a 3-pin DP surface mount package, optimizing PCB layout for industrial and commercial electronic designs. Its low maximum drain source resistance of 13.4 milliohms ensures efficient conduction with minimal power loss.

The device features a typical gate charge of 29 nanoCoulombs at the gate-source voltage, enabling fast switching suitable for applications in power management and motor control. It can endure gate source voltages from -20 to +20 volts, providing operational robustness.

Rated at 47 watts maximum power dissipation, it can handle substantial power loads within compact assemblies. The operating temperature range from -55°C up to 150°C allows it to function reliably in demanding industrial, automotive, and commercial environments.

Physically compact with dimensions of 10 mm length, 6.1 mm width, and 2.3 mm height, it supports surface mounting for high-density PCB integration. As a product of Toshiba made in Japan, it conforms to strict quality standards ensuring durability and performance.

Features a 3-pin DP surface mount package for compact PCB designs. Maximum drain source resistance (Rds) is 13.4 milliohms for efficient conduction. Typical gate charge is 29 nC at Vgs for fast switching applications. Supports maximum gate source voltage of -20 to +20 volts ensuring robust operation.

Power dissipation is rated at 47 watts allowing high power handling. Operating temperature range is from -55°C to 150°C suitable for harsh environments. Compact physical dimensions: length 10 mm, width 6.1 mm, height 2.3 mm.

Manufactured in Japan ensuring high-quality semiconductor standards.

This MOSFET is commonly used in industrial electronics, power management systems, automotive electronics, and laboratory equipment. It offers reliable switching performance and durability for professional and commercial applications. Explore more advanced semiconductor components in the Electronics & Electricals category on EnvMart.

Explore more products in our MOSFETs category.

Toshiba TK N-Channel MOSFET, 40 A, 40 V Enhancement Mode, 3-Pin DP Surface Mount TK40P04M1(T6RSS-Q)
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Frequently Asked Questions

It supports a maximum drain source voltage of 40 volts.

The maximum power dissipation is rated at 47 watts.

The typical gate charge is 29 nanoCoulombs at the gate-source voltage.

It can handle a maximum gate source voltage of -20 to +20 volts.

This model uses a surface mount package type.

The maximum drain source resistance is 13.4 milliohms.

This model has 3 pins.

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