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onsemi Small Signal NPN Transistor 100 mA 12 V 3-Pin SOT-23 BSV52LT1G

Category Semiconductor Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.11mm
Length 3.04mm
Model BSV52LT1G
Width 2.64mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 12V
Minimum DC Current Gain hFE 25
Transistor Polarity NPN
Maximum Collector Base Voltage VCBO 20V dc
Maximum Power Dissipation Pd 225mW
Maximum DC Collector Current Idc 100mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz

Key Features

  • Small signal NPN transistor designed for surface mounting.
  • Maximum DC collector current of 100 mA ensuring efficient current handling.
  • Collector-emitter voltage rating of 12 V suitable for low voltage applications.
  • Compact 3-pin SOT-23 package with footprint optimized for PCB integration.
  • Minimum DC current gain (hFE) of 25 for reliable signal amplification.
  • Maximum power dissipation rated at 225 mW for moderate power usage.
  • Wide operating temperature range from -55°C to 150°C.
  • Surface mount technology compatible package for automated assembly processes.

Product Description

onsemi BSV52LT1G is a small signal NPN bipolar junction transistor optimized for general purpose amplification and switching applications. Featuring a maximum DC collector current of 100 mA and a collector-emitter voltage rating of 12 V, it is ideal for low voltage electronic circuits requiring compact and surface mount components.

Housed in a 3-pin SOT-23 surface-mount package, the transistor enables high-density PCB layouts and automated manufacturing processes. Its minimum DC current gain (hFE) of 25 and power dissipation of 225 mW ensure reliable performance in signal amplification tasks.

The device supports a maximum transition frequency of 100 MHz, making it suitable for high-frequency switching applications in communications, instrumentation, and control devices. It operates efficiently across a wide temperature range from -55°C up to 150°C, facilitating use in diverse industrial and commercial environments.

Typical applications for the BSV52LT1G include low power signal processing, amplification stages, and general purpose switching circuits in industrial, laboratory, and consumer electronics sectors.

Small signal NPN transistor designed for surface mounting. 100 mA maximum collector current for efficient current handling. 12 V collector-emitter voltage rating suitable for low voltage circuits. Compact 3-pin SOT-23 package optimized for PCB integration.

Minimum DC current gain of 25 for reliable signal amplification. 225 mW power dissipation to support moderate power applications. High frequency response capability up to 100 MHz. Wide operating temperature range from -55°C to 150°C.

Surface mount package supports automated assembly. Single NPN transistor configuration for versatile applications.

This onsemi transistor BSV52LT1G is an essential component in electronic manufacturing, suitable for engineering designs in industrial automation, telecommunications, consumer electronics, laboratory instrumentation, and general electrical circuits where compact, reliable amplification and switching are required.

Explore a wide range of semiconductors and transistors in the Semiconductor category on EnvMart for professional industrial, electronic, and laboratory applications.

onsemi Small Signal NPN Transistor 100 mA 12 V 3-Pin SOT-23 BSV52LT1G
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Frequently Asked Questions

The maximum DC collector current for this transistor is 100 mA, ensuring efficient current handling for various applications.

The collector-emitter voltage rating is 12 V, making it suitable for low voltage applications.

It comes in a compact 3-pin SOT-23 surface-mount package, optimized for PCB integration.

The minimum DC current gain (hFE) is 25, which supports reliable signal amplification.

The maximum power dissipation is rated at 225 mW, suitable for moderate power usage.

It operates efficiently across a wide temperature range from -55°C to 150°C.

The maximum transition frequency is 100 MHz, making it suitable for high-frequency switching applications.

This model is a small signal NPN bipolar junction transistor, designed for general purpose amplification and switching applications.

The dimensions are 3.04 mm in length, 2.64 mm in width, and 1.11 mm in height.

The BSV52LT1G has a pin count of 3, suitable for various circuit designs.

Yes, it is designed for surface mount technology, enabling automated assembly processes.

The country of origin for this transistor is India.

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