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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 20.95mm |
| Length | 5.2mm |
| Model | PN2222ABU |
| Width | 4.19mm |
| Mount Type | Through Hole |
| Series | PN2222A |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-92 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 40V |
| Minimum DC Current Gain hFE | 35 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 6V |
| Maximum Collector Base Voltage VCBO | 75V |
| Maximum Power Dissipation Pd | 625mW |
| Maximum DC Collector Current Idc | 1A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 300MHz |
onsemi PN2222ABU is a small signal NPN bipolar transistor suitable for a wide range of electronic applications requiring reliable amplification and switching capabilities. It supports up to 1 A DC collector current and can withstand a collector-emitter voltage of 40 V, making it ideal for low power switching and amplifier circuits.
The device is packaged in a 3-pin TO-92 plastic casing, facilitating easy through-hole mounting on printed circuit boards. It features a maximum power dissipation of 625 mW and operates efficiently within a temperature range from -55°C to 150°C, ensuring performance stability in varying environmental conditions.
With a minimum DC current gain of 35 and a transition frequency of up to 300 MHz, this transistor is highly suitable for switching and amplification in both analog and digital circuits. The maximum collector-base voltage is 75 V with an emitter-base voltage rating of 6 V, providing robust voltage tolerance.
The physical compact design with dimensions measuring 20.95 mm in height, 4.19 mm in width, and 5.2 mm in length, makes it ideal for compact and space-constrained electronic devices.
onsemi PN2222ABU transistors find applications in industrial, laboratory, consumer electronics, communications, and educational circuit development environments. This transistor features a maximum power dissipation of 625 mW.
It has a minimum current gain (hFE) of 35 ensuring reliable amplification. Operating temperature range extends from -55°C to 150°C. Designed for through-hole mounting with a compact TO-92 package. Supports a maximum transition frequency of 300 MHz for high frequency applications.
It has a maximum collector-base voltage of 75 V and maximum emitter-base voltage of 6 V. Featuring NPN transistor polarity with a single transistor configuration. Physical dimensions: height 20.95 mm, width 4.19 mm, length 5.2 mm.
Explore more semiconductor and transistor products in the Bipolar Transistors category at EnvMart for comprehensive technical solutions.
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