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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.01mm |
| Length | 3.04mm |
| Model | NTR1P02LT3G |
| Width | 1.4mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 1.3A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 350mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 400mW |
| Typical Gate Charge Qg @ Vgs | 3.1nC |
| Maximum Gate Source Voltage Vgs | -12, +12V |
| Forward Voltage Vf | -1V |
onsemi NTR1P02LT3G is a P-Channel Power MOSFET designed for efficient switching and amplification in electronic circuits. Featuring a continuous drain current of 1.3A and a maximum drain-source voltage of 20V, it is built with enhancement mode operation housed in a compact 3-pin SOT-23 surface-mount package.
This MOSFET is suitable for industrial, automotive, and general electronics applications where space-saving and power efficiency are critical. It complies with the AEC-Q101 automotive standard, assuring high reliability and performance in automotive systems.
With a maximum power dissipation of 400mW and a typical gate charge of only 3.1nC, it supports fast switching speeds and reduced power losses. Its wide operating temperature range from -55°C to 150°C further extends its suitability to harsh environmental conditions.
Compact 3-pin SOT-23 package for surface mount design. Type P channel, enhancement mode for versatile control. Continuous drain current rating of 1.3A supports moderate load applications. Drain-source resistance of 350 milliohms ensures low conduction losses.
Rated for a maximum drain-source voltage of 20 volts. Capable of withstanding gate-source voltages up to ±12 volts. Typical forward voltage of -1V for efficient conduction. AEC-Q101 compliance ensures automotive-grade reliability.
Operating temperature range from -55°C to 150°C suitable for diverse conditions.
This onsemi MOSFET is an ideal component for use in power management, signal amplification, and switching in automotive electronics, manufacturing equipment, industrial machinery, and consumer electronic devices. Its reliability and performance make it a solid choice in demanding industrial and commercial environments.
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