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Vishay N-Channel MOSFET TO-263, 150 A, 80 V Enhancement Mode, Surface Mount, 3-Pin SUM60020E-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 4.57mm |
| Length | 10.41mm |
| Model | SUM60020E-GE3 |
| Width | 9.65mm |
| Mount Type | Surface |
| Series | SUM60020E |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 150A |
| Maximum Drain Source Voltage Vds | 80V |
| Maximum Drain Source Resistance Rds | 2.4mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 375W |
| Typical Gate Charge Qg @ Vgs | 151.2nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.5V |
Key Features
- Maximum continuous drain current of 150 amperes ensures robust device operation.
- Maximum drain-source voltage rating of 80 volts for efficient switching.
- Enhancement mode channel ensures stable performance under various load conditions.
- Surface mount TO-263 package with 3 pins allows easy PCB integration.
- Low on-resistance of 2.4 milliohms reduces conduction losses.
- Typical gate charge of 151.2 nanocoulombs optimizes switching speed and power efficiency.
- Maximum power dissipation of 375 watts supports high power applications.
- Operating temperature range from -55°C minimum up to 175°C maximum junction temperature.
Product Description
Vishay SUM60020E-GE3 is an N-Channel MOSFET designed for high power and efficient switching applications. Rated for a maximum continuous drain current of 150 amperes and a drain-source voltage up to 80 volts, this device is suited for industrial power management circuits requiring reliable performance.
This enhancement mode MOSFET uses TrenchFET® technology, optimizing efficiency by maintaining low gate charge and low on-resistance of only 2.4 milliohms, which reduces conduction losses and power dissipation.
The device is housed in a TO-263 surface mount package with a 3-pin configuration, facilitating easy integration into printed circuit boards in power electronics, motor drives, and industrial control systems.
Operational temperature ratings extend from -55°C to a junction temperature of 175°C, allowing use in harsh environments. Maximum power dissipation capability is 375 watts, supporting demanding applications.
The typical gate charge at a gate-source voltage of 4.5 V is 151.2 nC, enhancing switching performance. Forward voltage drop is 1.5 V, contributing to overall energy efficiency. The maximum gate-source voltage rating is ±20 volts, protecting the device from gate overvoltage damage.
The compact physical dimensions of length 10.41 mm, width 9.65 mm, and height 4.57 mm make this device suitable for space-constrained designs. Maximum continuous drain current of 150 A. Maximum drain-source voltage 80 V.
Low typical gate charge of 151.2 nC for reduced switching losses. High power dissipation of 375 W. Operating range from -55°C to 175°C junction temperature. Low on-resistance at 2.4 mΩ. 3-pin TO-263 surface mount package.
N-Channel enhancement mode operation. Forward voltage drop of 1.5 V. Maximum gate-source voltage of ±20 V.
This Vishay MOSFET is suitable for use in industrial, power electronics, electronic component manufacturing, and high-power switching applications where efficiency and reliability are essential.
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Frequently Asked Questions
The maximum continuous drain current for this model is 150 amperes.
This MOSFET has a maximum drain-source voltage rating of 80 volts.
The typical gate charge at a gate-source voltage of 4.5 V is 151.2 nanocoulombs.
It has a low on-resistance of 2.4 milliohms, which helps reduce conduction losses.
The maximum power dissipation capability of this model is 375 watts.
The dimensions of the TO-263 package are 10.41 mm in length, 9.65 mm in width, and 4.57 mm in height.
The operating temperature range extends from -55°C to a maximum of 175°C.
It comes in a TO-263 surface mount package with a 3-pin configuration.
This MOSFET is suitable for high-power switching applications, industrial power management circuits, and motor drives.
The maximum gate-source voltage rating is ±20 volts, which protects the device from gate overvoltage damage.
The forward voltage drop for this model is 1.5 volts.
It uses an N-channel enhancement mode, which ensures stable performance under various load conditions.
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