Infineon Low Loss IGBT Transistor 15 A 600 V TO-220 Package IGP15N60TXKSA1

The Infineon IGP15N60TXKSA1 is a low loss Insulated Gate Bipolar Transistor (IGBT) designed for high efficiency and reliability in power switching applications. This device features a maximum continuous collector current of 15 A and a collector-emitter voltage rating of 600 V, making it suitable for a broad range of industrial and commercial power electronics systems.

Contained in a TO-220 package, the transistor offers robust mechanical structure and excellent thermal performance. It operates over a wide temperature range from -40°C to 175°C, maintaining stable and temperature-resistant conductive behavior. The device is designed with very low gate charge and low collector-emitter saturation voltage of 1.5 V, reducing conduction losses and improving overall system efficiency.

Infineon's TRENCHSTOPTM series IGBTs are known for high ruggedness and low electromagnetic interference (EMI) emissions, contributing to reliable operation in sensitive control environments. The fast recovery anti-parallel emitter-controlled diode integrated with the IGBT ensures soft switching, further enhancing efficiency and device longevity.

This component is compliant with JEDEC standards, ensuring quality and consistency required in semiconductor power devices. Its design prioritizes low switching and conduction losses, making it a preferred choice in applications such as industrial drives, solar inverters, UPS systems, and automotive power controls.

Key technical features include a maximum power dissipation of 130 W, ±20 V gate-emitter voltage tolerance, and precise dimensional specs with length 29.95 mm, width 10.36 mm, and height 4.57 mm, facilitating integration into diverse power modules.

Set your designs for success with the Infineon IGP15N60TXKSA1 low loss IGBT transistor, combining efficiency, thermal management, and rugged stability in a compact TO-220 footprint.

Supports maximum continuous collector current of 15 A ensuring reliable power switching. Rated for maximum collector-emitter voltage of 600 V for high voltage applications. Maximum power dissipation of 130 W enabling efficient thermal management.

Features TO-220 package offering easy integration and effective heat dissipation. High gate-emitter voltage tolerance of ±20 V to protect device integrity. Collector-emitter saturation voltage is low at 1.5 V for reduced conduction losses.

Operates efficiently over a temperature range from -40°C to 175°C. Built to JEDEC standards for assured quality and reliability. Part of the TRENCHSTOPTM series designed for low switching and conduction losses. Includes fast recovery anti-parallel diode for soft switching and low EMI.

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