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DiodesZetex Silicon Junction Switching Diode Single 215 mA 85 V SOT-23 3-Pin BAS116-7-F

Category Semiconductor Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 1.1mm
Length 3mm
Model BAS116-7-F
Width 1.4mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-23
Sub Type Silicon Junction
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Power Dissipation Pd 250mW
Diode Configuration Single
Peak Non-Repetitive Forward Surge Current Ifsm 4A
Maximum Forward Voltage Vf 1.25V
Peak Reverse Recovery Time trr 3ns
Maximum Forward Current If 215mA
Maximum Peak Reverse Repetitive Voltage Vrrm 85V

Key Features

  • Designed as a single silicon junction diode for switching applications.
  • Supports a maximum forward current of 215 mA for reliable operation.
  • Features a maximum repetitive peak reverse voltage of 85 V.
  • Compact SOT-23 surface mount package with 3 pins ensures easy PCB integration.
  • Maximum power dissipation is up to 250 mW suitable for small signal applications.
  • Peak reverse recovery time is 3 nanoseconds for fast switching.
  • Forward voltage drop is typically 1.25 V enhancing efficiency.
  • Wide operating temperature range from -65°C to 150°C.

Product Description

DiodesZetex BAS116-7-F is a silicon junction single switching diode designed for small signal applications requiring fast switching and reliable performance. It features a maximum forward current of 215 mA and a maximum repetitive peak reverse voltage of 85 V, making it suitable for various electronic circuits including signal processing and switching applications.

The diode comes in a compact SOT-23 surface mount package with 3 pins, enabling easy integration on printed circuit boards with limited space. Its peak reverse recovery time of 3 nanoseconds ensures fast switching, while the maximum power dissipation rating of 250 mW supports stable operation under load conditions.

With a typical forward voltage of 1.25 V and the ability to handle peak non-repetitive forward surge currents up to 4 A, this diode is designed to withstand transient conditions common in electronic circuits. The diode operates efficiently over a wide temperature range from -65°C to 150°C, suitable for demanding industrial and commercial electronic environments.

The physical dimensions are approximately 3 mm in length, 1.4 mm in width, and 1.1 mm in height, which emphasizes its suitability for miniaturized electronic devices and densely populated circuit boards.

Designed as a single silicon junction diode for switching applications. Supports a maximum forward current of 215 mA for reliable operation. Features a maximum repetitive peak reverse voltage of 85 V. Compact SOT-23 surface mount package with 3 pins ensures easy PCB integration.

Maximum power dissipation is up to 250 mW suitable for small signal applications. Peak reverse recovery time is 3 nanoseconds for fast switching. Forward voltage drop is typically 1.25 V enhancing efficiency. Wide operating temperature range from -65°C to 150°C.

Peak non-repetitive forward surge current of 4 A for transient handling. Physical dimensions approximately 3 mm (L) x 1.4 mm (W) x 1.1 mm (H).

This diode is ideal for use in industrial, electronic manufacturing, laboratory, and commercial electronic devices requiring precise switching components. Its robust specifications and compact packaging meet the demands of modern electronic circuit design.

Explore our extensive Semiconductor range to find compatible components and enhance your project designs at EnvMart.

DiodesZetex Silicon Junction Switching Diode Single 215 mA 85 V SOT-23 3-Pin BAS116-7-F
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Frequently Asked Questions

The maximum forward current for the BAS116-7-F diode is 215 mA, ensuring reliable operation in various applications.

The peak reverse recovery time of the BAS116-7-F is 3 nanoseconds, allowing for fast switching performance.

This diode can handle a maximum repetitive peak reverse voltage of 85 V, making it suitable for various electronic circuits.

The physical dimensions of this diode are approximately 3 mm in length, 1.4 mm in width, and 1.1 mm in height.

The BAS116-7-F comes in a compact SOT-23 surface mount package, which is designed for easy PCB integration.

The maximum power dissipation for the BAS116-7-F is up to 250 mW, suitable for small signal applications.

The typical forward voltage drop for the BAS116-7-F is 1.25 V, which enhances its efficiency in operation.

This diode operates efficiently over a wide temperature range from -65°C to 150°C, suitable for demanding environments.

The BAS116-7-F can handle a peak non-repetitive forward surge current of up to 4 A, which is important for transient conditions.

This diode features a 3-pin configuration, allowing for straightforward integration into electronic circuits.

The BAS116-7-F is a single silicon junction diode designed specifically for switching applications.

This diode is suitable for various electronic circuits, including signal processing and switching applications in industrial and commercial devices.

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