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onsemi N-Channel MOSFET, 500 mA, 60 V Enhancement Mode, 3-Pin TO-92 Package BS170

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onsemi N-Channel MOSFET, 500 mA, 60 V Enhancement Mode, 3-Pin TO-92 Package BS170

Name: onsemi N-Channel MOSFET, 500 mA, 60 V Enhancement Mode, 3-Pin TO-92 Package BS170
Brand: onsemi
SKU: 347575
Price: 0.19 USD
Availability: InStock

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Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	5.33mm
Length	5.2mm
Model	BS170
Width	4.19mm
Mount Type	Through Hole
Series	BS170
Maximum Operating Temperature	150°C
Package Type	TO-92
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	500mA
Maximum Drain Source Voltage Vds	60V
Maximum Drain Source Resistance Rds	5Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	830mW
Typical Gate Charge Qg @ Vgs	1.6nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	600mV
N-channel MOSFET,BS170 0.5A 60VBrand	ON Semiconductor
onsemi BS170 N-Channel MOSFET, 500 mA, 60 V Enhancement, 3-Pin TO-92Brand	onsemi
N-Channel MOSFET Transistor, 500 mA, 60 V, 3-Pin TO-92 onsemi BS170GBrand	ON Semiconductor

Key Features

This device operates with a maximum continuous drain current of 500 mA.
Maximum drain-source voltage rating is 60 V, suitable for low voltage switching tasks.
Features an enhancement mode channel with typical gate charge of 1.6 nC at Vgs.
Has a maximum drain-source resistance of 5 Ω ensuring efficient conduction.
Max power dissipation of 830 mW allows low power handling with compact form factor.
Physical dimensions include 5.2 mm length, 4.19 mm width, and 5.33 mm height.
Designed with a through-hole mount type and TO-92 package for easy PCB integration.
Maximum operating temperature reaches up to 150°C and minimum down to -55°C for industrial environments.

Product Description

onsemi BS170 N-Channel MOSFET is an enhancement mode field effect transistor housed in a TO-92 package featuring three pins. It supports a maximum continuous drain current of 500 mA and a drain-source voltage rating of 60 V, making it suitable for various low-power switching and amplification applications in industrial, electronics, and semiconductor environments.

Designed with Fairchild Semiconductor's high cell density DMOS technology, the BS170 ensures low on-state resistance, rugged performance, and rapid switching capabilities. This MOSFET is ideal for circuits requiring efficient switching, inverters, driver stages, and load switching in embedded systems.

The device's maximum power dissipation is 830 mW, and it is rated for operation across a wide temperature range from -55°C to 150°C, suitable for demanding HVAC, manufacturing, and laboratory instrumentation applications.

The compact dimensions of 5.2 mm length, 4.19 mm width, and 5.33 mm height combined with a through-hole TO-92 package type facilitate straightforward mounting and integration on printed circuit boards.

This MOSFET supports a maximum drain-source resistance Rds of 5 Ω, providing efficient conduction. The typical gate charge of 1.6 nC supports high-speed switching. Its maximum gate-source voltage rating is ±20 V, safeguarding gate integrity.

Forward voltage is approximately 600 mV, helping manage power losses. Packaging includes the 3-pin TO-92 format standard for industry compatibility.

These features make the onsemi BS170 MOSFET a reliable choice for power management, switching, and signal amplification in automotive, HVAC, manufacturing, and laboratory electronic systems.

Explore more high-quality semiconductor components like MOSFETs and discrete semiconductors in the Electronics & Electricals category at EnvMart for industrial and commercial applications.