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onsemi P-Channel MOSFET 1 A 20 V Enhancement Mode 3-Pin SOT-23 NDS332P

Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 940μm
Length 2.92mm
Model NDS332P
Width 1.4mm
Mount Type Surface
Series NDS332
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type Type P
Maximum Continuous Drain Current Id 1A
Maximum Drain Source Voltage Vds 20V
Maximum Drain Source Resistance Rds 300mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 500mW
Typical Gate Charge Qg @ Vgs 3.7nC
Maximum Gate Source Voltage Vgs -8, +8V
Forward Voltage Vf -1.2V
P-Channel MOSFET Transistor, 750 mA, 12 V, 3-Pin SOT-23 NXP BSH205,215Brand NXP

Key Features

  • The device features a compact 3-pin SOT-23 surface-mount package.
  • It offers a low maximum drain-source resistance of 300 mΩ for efficient conduction.
  • Typical gate charge at Vgs is only 3.7 nC ensuring fast switching performance.
  • Maximum power dissipation is rated at 500 mW, suitable for low power applications.
  • Operating temperature range is from -55°C to 150°C, ensuring reliability in harsh environments.
  • The MOSFET utilizes DMOS technology for rugged, reliable and high density performance.
  • Applications include load switching, DC/DC converters, battery protection, power management, and DC motor control.
  • This component is RoHS compliant and suitable for industrial electronic circuit designs.

Product Description

onsemi NDS332P is a P-Channel enhancement mode MOSFET transistor with a maximum continuous drain current of 1 A and maximum drain-source voltage of 20 V, housed in a compact 3-pin SOT-23 surface mount package.

Manufactured using ON Semiconductor's high-density DMOS technology, this device delivers low on-state resistance (300 mΩ maximum) and fast switching capabilities due to its low gate charge of 3.7 nC. It is rated for maximum power dissipation up to 500 mW and designed to operate reliably within a temperature range of -55°C to 150°C.

Typical industrial applications include load switching, DC/DC conversion, and battery protection circuits. The device's enhancement mode operation makes it suitable for power management and DC motor control in a broad range of electronic and industrial control systems.

The small SOT-23 package with dimensions approximately 2.92 mm length, 1.4 mm width, and 940 μm height supports surface-mount assembly on printed circuit boards, enabling compact and efficient circuit designs. onsemi continues to provide a wide portfolio of MOSFETs catering to high-voltage and low-voltage applications for industrial, commercial, and automotive electronics.

The NDS332P provides rugged and reliable switching performance with superior saturation current capacity. Designed for compact PCB footprint enabling space saving in electronic products. High-density proprietary DMOS technology reduces on-state resistance for power efficiency.

Wide operating temperature range delivers robustness in extreme industrial environments. Low gate charge supports rapid switching frequency requirements in power electronics. Suitable for various applications including load switching, DC/DC converters, and power management systems.

Compliance with RoHS standards ensures environmentally friendly electronic manufacturing. Discover the comprehensive range of semiconductor components and discrete MOSFETs available at EnvMart for advanced industrial and commercial electronics design needs.

onsemi P-Channel MOSFET 1 A 20 V Enhancement Mode 3-Pin SOT-23 NDS332P
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Frequently Asked Questions

The maximum continuous drain current for this model is 1 A.

The maximum drain-source voltage is 20 V.

The maximum drain-source resistance is 300 mΩ, ensuring efficient conduction.

The typical gate charge at Vgs is 3.7 nC, allowing for fast switching performance.

It operates reliably within a temperature range of -55°C to 150°C.

The dimensions of the SOT-23 package are approximately 2.92 mm in length, 1.4 mm in width, and 940 μm in height.

The maximum power dissipation is rated at 500 mW.

This model utilizes surface mounting for assembly on printed circuit boards.

It is suitable for applications such as load switching, DC/DC converters, battery protection, and power management.

The maximum gate-source voltage is -8 V to +8 V.

It utilizes high-density DMOS technology for rugged and reliable performance.

Yes, this component is RoHS compliant, ensuring it meets environmental standards.

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