onsemi QFET Type P-Channel MOSFET 22 A 100 V Enhancement 3-Pin TO-263 FQB22P10TM

onsemi FQB22P10TM is a high-quality QFET Type P-Channel MOSFET designed for electronic components and power management applications. It supports a maximum continuous drain current of 22 A and withstands drain-source voltages up to 100 V, providing robust switching and amplification performance in power electronics.

The device features an enhancement mode channel that ensures efficient operation within various industrial, laboratory, and commercial electronic systems. Packaged in a compact surface mount TO-263 format with 3 pins, it is designed for ease of mounting on printed circuit boards.

Key electrical specifications include a maximum power dissipation of 3.75 W, enabling reliable performance under moderate load conditions, and a maximum gate-source voltage of -30 V to +30 V, providing extensive tolerance for voltage swings during operation. The device exhibits a low maximum drain-source resistance of 125 mΩ, enhancing conduction efficiency and minimizing heat generation.

With a high maximum operating temperature of 175°C and a minimum operating temperature down to -55°C, the FQB22P10TM MOSFET suits demanding environments including industrial controls, power supplies, and HVAC systems. Its typical gate charge of 40 nC at standard gate voltage ensures fast switching response, beneficial for high-frequency applications.

Physical dimensions of 10.67 mm length, 9.65 mm width, and 4.83 mm height facilitate compact and space-conscious PCB layouts. Although not certified to automotive standards, the MOSFET is reliable for general semiconductor applications in electronics manufacturing and power control.

This MOSFET is designed with an Enhancement channel mode providing reliable performance. It comes in a 3-pin TO-263 surface mount package ensuring easy integration. Maximum power dissipation is rated at 3.75 W, suitable for moderate power applications.

The device operates within a temperature range of -55°C to 175°C. Maximum gate source voltage tolerance is -30 V to +30 V, allowing robust control. The low maximum drain source resistance of 125 mΩ ensures high efficiency.

Typical gate charge is 40 nC at the specified gate voltage, enabling fast switching. Physical dimensions of 10.67 mm length, 9.65 mm width, and 4.83 mm height support compact design layouts. The MOSFET is not compliant with any automotive standards but ideal for general electronic and power management applications.

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