onsemi Isolated PowerTrench 2 Dual N-Channel MOSFET 20 V, 6.5 A, 30mΩ, 2W SOIC 8-Pin FDS9926A

onsemi FDS9926A Isolated PowerTrench 2 Dual N-Channel MOSFET offers a continuous drain current of 6.5 A and drain-source voltage rating of 20 V, housed in a compact SOIC 8-pin surface mount package. This enhancement mode MOSFET uses onsemi's PowerTrench® technology to provide efficient power switching with low resistance and fast switching speed, making it ideal for advanced electronic applications.

The device features a maximum drain-source resistance of just 30 milliohms, enabling reduced conduction losses and improved system efficiency. Its maximum power dissipation of 2 W allows dependable thermal handling in demanding environments. The MOSFET operates reliably over a wide temperature range from -55°C to 150°C, supporting industrial and commercial use cases.

Its isolated dual N-channel design simplifies circuit layout and supports synchronous rectification in AC/DC power supplies and other power management applications. The soft body diode characteristic helps eliminate snubber circuits or allows replacement of higher voltage MOSFETs, improving overall system design. With a typical gate charge of 6.2 nC and a gate-source voltage rating between -10 V and +10 V, the device achieves low gate drive losses and stable operation.

Product dimensions are approximately 5 mm in length, 4 mm in width, and 1.5 mm in height, fitting compact layouts. The SOIC package type is widely used in surface-mount technology, ensuring compatibility with modern PCB assembly processes.

onsemi PowerTrench MOSFETs are extensively used in industrial power management, consumer electronics, telecommunications, and automotive applications where fast switching and efficiency are critical.

Features low maximum drain-source resistance of 30 milliohms for efficient power management. Supports a maximum power dissipation of 2 watts for thermal efficiency. Small form factor with dimensions approximately 5 mm length, 4 mm width, and 1.5 mm height.

Operating temperature range from -55°C to 150°C for industrial reliability. Enhancement mode transistor configuration with isolated dual N-channel design. Designed with PowerTrench® technology for fast switching performance in synchronous rectification.

Includes a soft body diode that eliminates the need for snubber circuits in AC/DC power supply applications. Typical gate charge of 6.2 nC enables low gate drive power consumption. Handles gate-source voltage between -10 V and +10 V to ensure stable operation.

Package type is surface mount SOIC with 8 pins for compatibility in compact electronic devices. Browse more PowerTrench MOSFETs and electronic components on EnvMart for high-quality semiconductor solutions.