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onsemi QFET Type P-Channel MOSFET 27 A 60 V Enhancement Mode 3-Pin TO-263 FQB27P06TM
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 4.83mm |
| Length | 10.67mm |
| Model | FQB27P06TM |
| Width | 9.65mm |
| Mount Type | Surface |
| Series | QFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 27A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 70mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 3.75W |
| Typical Gate Charge Qg @ Vgs | 33nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | -4V |
Key Features
- Maximum continuous drain current of 27 A ensures efficient high-current applications.
- Supports maximum drain-source voltage of 60 V for reliable switching.
- Packaged in 3-pin TO-263 surface-mount package for compact mounting.
- Built using proprietary high cell density DMOS technology for lower on-resistance.
- Features rugged and reliable performance with fast switching capabilities.
- Typical gate charge of 33 nC supports efficient gate drive control.
- Wide operating temperature range from -55°C to 175°C for industrial environments.
- Applications include DC/DC converters, battery protection, motor control, and power management.
Product Description
The onsemi FQB27P06TM is a high-density cell design P-Channel MOSFET housed in a 3-pin TO-263 surface-mount package, offering a maximum continuous drain current of 27 A and a drain-source voltage rating of 60 V.
Engineered with ON Semiconductor's proprietary DMOS technology, this enhancement mode MOSFET exhibits low on-resistance with a maximum Rds(on) of 70 mΩ, enabling efficient power switching and excellent thermal performance.
The device operates reliably within a broad temperature range from -55°C to 175°C, making it suitable for demanding industrial, automotive, and commercial environments.
Featuring a typical gate charge of 33 nC and a maximum gate-source voltage of ±25 V, the MOSFET provides fast switching capabilities that enhance performance in DC/DC converters, battery protection circuits, load switching, and motor control applications.
The compact TO-263 package facilitates easy surface mounting, reducing board space while allowing a power dissipation up to 3.75 W under appropriate thermal conditions. Voltage controlled P-Channel MOSFET with enhancement mode design.
High saturation current capability for demanding load switching tasks. Low on-state resistance reduces conduction losses. Wide temperature range supports varied industrial applications. Surface mount TO-263 package for space-efficient installation.
Maximum power dissipation of 3.75 W. Typical gate charge of 33 nC ensures swift switching. Applications include DC/DC conversion, battery management, and motor control. Robust construction using ON Semiconductor DMOS technology.
Operates with maximum gate-source voltage of ±25 V.
This QFET Type P-Channel MOSFET from onsemi is an ideal component for designers seeking durable and efficient power transistors for a wide range of electronic and power management applications.
Explore more onsemiconductor MOSFETs and other power components in the Electronics & Electricals category at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 27 A, making it suitable for high-current applications.
This MOSFET supports a maximum drain-source voltage of 60 V, ensuring reliable switching performance.
It is packaged in a 3-pin TO-263 surface-mount package, which facilitates compact mounting on circuit boards.
The device operates within a wide temperature range from -55°C to 175°C, suitable for various industrial environments.
The typical gate charge is 33 nC, supporting efficient gate drive control for fast switching.
The maximum power dissipation is rated at 3.75 W under appropriate thermal conditions.
The maximum gate-source voltage for this MOSFET is ±25 V, which is essential for its operation.
This model has dimensions of 10.67 mm in length, 9.65 mm in width, and 4.83 mm in height.
The maximum on-resistance (Rds(on)) is 70 mΩ, which helps reduce conduction losses during operation.
It is suitable for applications including DC/DC converters, battery protection, motor control, and power management.
This model utilizes a P-Channel type, designed for enhancement mode operation.
The country of origin for this MOSFET is India.
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