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onsemi Isolated PowerTrench 2 N-Channel MOSFET, 6 A, 40 V Enhancement Mode, 8-Pin SOIC FDS8949
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.5mm |
| Length | 5mm |
| Model | FDS8949 |
| Width | 4mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Number of Elements per Chip | 2 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 6A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 29mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2W |
| Typical Gate Charge Qg @ Vgs | 7.7nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 0.8V |
| Transistor Configuration | Isolated |
Key Features
- This MOSFET features a low maximum drain source resistance of 29 milliohms for efficient conduction.
- It supports a maximum power dissipation of 2 W, suitable for compact electronic applications.
- The device operates reliably in a temperature range from -55°C to 150°C.
- The typical gate charge is 7.7 nanocoulombs at Vgs, optimizing switching speed.
- The transistor configuration is isolated, enhancing circuit integration.
- An 8-pin SOIC surface mount package ensures easy PCB assembly.
- The device supports a maximum gate source voltage range of -20 V to +20 V.
Product Description
onsemi FDS8949 Isolated PowerTrench 2 N-Channel MOSFET is designed for reliable performance in discrete semiconductor applications requiring efficient switching and amplification. Operating at a continuous drain current of 6 A and a drain-source voltage of 40 V, this enhancement-mode MOSFET is suitable for industrial, electronic, automotive, and manufacturing sectors.
The device features a low on-resistance of 29 milliohms, which minimizes conduction losses and improves efficiency in power management circuits. It has a maximum power dissipation rating of 2 W, allowing for compact designs.
This MOSFET operates over a wide temperature range of -55°C to 150°C, ensuring durability in harsh environments. The typical gate charge of 7.7 nC at Vgs allows for fast switching speeds, critical in high-frequency applications.
The transistor is configured as an isolated dual N-Channel MOSFET, packaged in a compact 8-pin SOIC surface mount, facilitating easy board-level integration and space-saving designs.
With gate source voltage tolerances ranging from -20 V to +20 V and a forward voltage of 0.8 V, it meets demanding electrical requirements. Mechanical dimensions are compact, measuring 5 mm in length, 4 mm in width, and 1.5 mm in height.
Low on-resistance enhances power efficiency. Wide operating temperature range ensures reliability in industrial settings. Isolated transistor configuration supports versatile circuit designs. Compact SOIC package simplifies PCB assembly and design.
Typical gate charge enables fast switching. Supports automotive and commercial applications requiring robust semiconductor devices. Designed to comply with relevant quality and reliability standards.
This MOSFET is ideal for applications in power supplies, motor control, signal amplification, and electronic switching circuits within automotive, industrial, and electronic manufacturing domains. Explore more semiconductor and MOSFET solutions in the Electronics & Electricals category on EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 6 A.
It can handle a maximum drain-source voltage of 40 V.
The typical gate charge at Vgs is 7.7 nanocoulombs.
The maximum power dissipation rating for this model is 2 W.
This MOSFET measures 5 mm in length, 4 mm in width, and 1.5 mm in height.
The maximum gate-source voltage range is from -20 V to +20 V.
The maximum drain-source resistance is 29 milliohms.
It operates reliably in a temperature range from -55°C to 150°C.
It comes in an 8-pin SOIC surface mount package.
The transistor configuration is isolated, featuring dual N-Channel MOSFETs.
This MOSFET is suitable for applications in power supplies, motor control, signal amplification, and electronic switching circuits.
It belongs to the PowerTrench series of MOSFETs.
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