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onsemi QFET Type P-Channel MOSFET, 22 A, 100 V Enhancement Mode, 3-Pin TO-263 Package FQB22P10TM
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 4.83mm |
| Length | 10.67mm |
| Model | FQB22P10TM |
| Width | 9.65mm |
| Mount Type | Surface |
| Series | QFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 22A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 125mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 3.75W |
| Typical Gate Charge Qg @ Vgs | 40nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | -4V |
| P-channel MOSFET STB16PF06L 16A 60VBrand | STMicroelectronics |
Key Features
- Supports a maximum continuous drain current of 22 A.
- Maximum drain to source voltage rating is 100 V for reliable operation.
- Enhancement mode channel configuration suitable for switching applications.
- Low maximum drain-source resistance of 125 mΩ improves efficiency.
- Compact TO-263 package with 3 pins for surface mount assembly.
- Wide operating temperature range from -55°C to 175°C for robust industrial use.
- Maximum power dissipation of 3.75 W to handle significant load conditions.
- Typical gate charge at Vgs is 40 nC, enabling rapid switching performance.
Product Description
The onsemi FQB22P10TM is a high-performance P-Channel MOSFET transistor designed for power electronics and switching applications in industrial, automotive, and commercial equipment. Its QFET series configuration offers reliable performance with an enhancement channel mode. Packaged in a 3-pin TO-263 surface mount housing, this MOSFET supports a maximum continuous drain current of 22 A and a maximum drain-source voltage of 100 V, making it suitable for a variety of power control circuits.
The device features a maximum power dissipation of 3.75 W and a low Rds(on) of 125 mΩ, which aids in efficient power management and reduced heat generation. Its wide operating temperature range from -55°C up to 175°C ensures stable operation in harsh environments. The gate charge is optimized at 40 nC for swift switching, and the gate-source voltage tolerance spans from -30 V to +30 V, allowing safe operation in varying voltage conditions.
Its compact physical dimensions (10.67 mm length, 9.65 mm width, and 4.83 mm height) enable high-density PCB layouts. The FQB22P10TM is ideal for applications in industrial automation, automotive electronics, power management, and other electronics and electrical devices requiring robust, efficient MOSFET switching elements.
Maximum continuous drain current of 22 A for heavy-duty power applications. Maximum drain-source voltage rating of 100 V ensuring high voltage tolerance. Enhancement mode, P-Channel MOSFET operation for precise control. Surface-mount TO-263 package for compact and reliable installation.
Wide temperature endurance from -55°C to 175°C for demanding conditions. Low on resistance (125 mΩ) to minimize power losses. Power dissipation capacity of 3.75 W to sustain moderate power loads. Optimized gate charge of 40 nC ensures efficient switching speed.
High gate-source voltage rating of ±30 V for enhanced durability.
This product is supplied new, meeting industry standards, and is suitable for professionals designing or repairing power electronic systems. Explore more MOSFET options and related electronic components at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 22 A, making it suitable for heavy-duty power applications.
This MOSFET has a maximum drain-source voltage rating of 100 V, ensuring high voltage tolerance during operation.
The FQB22P10TM is packaged in a 3-pin TO-263 surface mount housing, allowing for compact and reliable installation.
It operates within a wide temperature range from -55°C to 175°C, making it suitable for demanding industrial environments.
The maximum power dissipation for this unit is 3.75 W, allowing it to handle significant load conditions effectively.
The typical gate charge at Vgs for this model is 40 nC, which enables rapid switching performance.
This MOSFET features a maximum drain-source resistance of 125 mΩ, which improves efficiency in power management.
The height of the TO-263 package is 4.83 mm, and the width is 9.65 mm, facilitating high-density PCB layouts.
It is suitable for applications in industrial automation, automotive electronics, and power management requiring efficient MOSFET switching elements.
The gate-source voltage tolerance spans from -30 V to +30 V, allowing safe operation under varying voltage conditions.
This model has a pin count of 3, designed for surface mount assembly.
This device utilizes a P-channel type configuration, suitable for enhancement mode operation.
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