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onsemi PowerTrench Type P-Channel MOSFET 3A 60V Enhancement 6-Pin SOT-23 FDC5614P
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1mm |
| Length | 3mm |
| Model | FDC5614P |
| Width | 1.7mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 6 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 3A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 105mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.6W |
| Typical Gate Charge Qg @ Vgs | 15nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.2V |
Key Features
- Features a compact 6-pin SOT-23 surface mount package suitable for space-constrained applications.
- Provides low on-resistance of 105 milliohms to minimize power loss during operation.
- Supports a maximum power dissipation of 1.6 watts for reliable performance under load.
- Operates across a wide temperature range from -55°C to 150°C, ensuring stable functionality in harsh environments.
- Employs a shielded-gate structure for improved switching performance and reduced figure of merit.
- Soft body diode characteristic reduces the need for additional snubber circuits in synchronous rectification.
- Typical gate charge is low at 15 nanocoulombs, contributing to efficient switching behavior.
- Maximum gate-source voltage rating is ±20 volts, providing safe gate drive limits.
Product Description
onsemi FDC5614P is a PowerTrench® P-Channel MOSFET designed for efficient power switching with a maximum continuous drain current of 3 A and a drain-source voltage rating of 60 V. It uses an enhancement-mode channel and is housed in a 6-pin SOT-23 surface mount package providing excellent integration in compact electronic assemblies.
The device is optimized for power density and system efficiency by employing an advanced shielded-gate structure that balances charge, significantly lowering the figure of merit (FOM) compared to previous generations. This results in faster switching speeds and reduced power dissipation, making it suitable for high-performance synchronous rectification and power management applications.
This MOSFET features a low on-resistance of 105 milliohms that minimizes conduction losses and a maximum power dissipation capability of 1.6 W, ensuring reliable operation under thermal stress. Operating temperatures range from -55°C to 150°C, allowing it to perform reliably in industrial and automotive environments.
Its soft body diode feature eliminates the need for external snubber circuits or allows for the replacement of higher-voltage MOSFETs, enhancing system design efficiency. Typical gate charge measures 15 nC at a gate-source voltage of 10 V, enabling rapid switching with minimal energy loss. It also supports a maximum gate-source voltage of ±20 V for safe gate control.
The compact physical package dimensions of length 3 mm, width 1.7 mm, and height 1 mm provide suitability for space-sensitive PCB designs. This device is ideal for use in power management circuits, DC/DC converters, and other semiconductor applications requiring efficient low-voltage P-channel MOSFET performance.
Key features include:. Low on-resistance and power dissipation for efficient energy management. Wide temperature operating range for robustness in demanding conditions. Soft body diode for simplified power circuitry designs.
Enhanced switching performance due to power trench and shielded-gate technology. Surface-mount 6-pin SOT-23 package for compact electronics applications.
Explore onsemi brand products and PowerTrench MOSFET series at EnvMart for reliable semiconductor solutions in industrial, automotive, and electronic component manufacturing sectors.
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Frequently Asked Questions
The maximum continuous drain current for this model is 3 A.
It has a maximum drain-source voltage rating of 60 V.
The on-resistance is 105 milliohms, which helps minimize power loss during operation.
This MOSFET supports a maximum power dissipation of 1.6 watts.
It operates across a wide temperature range from -55°C to 150°C.
The typical gate charge is 15 nanocoulombs at a gate-source voltage of 10 V.
It is housed in a compact 6-pin SOT-23 surface mount package.
The maximum gate-source voltage rating is ±20 volts.
The dimensions are 3 mm in length, 1.7 mm in width, and 1 mm in height.
This model features a P-channel enhancement-mode channel.
The forward voltage is -1.2 V.
It is suitable for power management circuits, DC/DC converters, and other semiconductor applications requiring efficient low-voltage performance.
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