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Vishay N-Channel MOSFET, 16 A, 400 V Enhancement Type, 3-Pin TO-247 IRFP350LCPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 20.7mm |
| Length | 15.87mm |
| Model | IRFP350LCPBF |
| Width | 5.31mm |
| Mount Type | Through Hole |
| Series | IRFP |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 16A |
| Maximum Drain Source Voltage Vds | 400V |
| Maximum Drain Source Resistance Rds | 300mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 190W |
| Typical Gate Charge Qg @ Vgs | 76nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.6V |
| N-Channel MOSFET Transistor, 16 A, 400 V, 3-Pin TO-247AC Vishay IRFP350LCBrand | Vishay |
Key Features
- Features an enhancement mode channel for efficient switching performance.
- Maximum power dissipation rating of 190 W supports high power applications.
- Operating temperature range from -55°C to 150°C ensures reliability under diverse conditions.
- Typical gate charge of 76 nC supports fast switching speeds.
- Low maximum drain-source resistance of 300 milliohms minimizes conduction losses.
- Designed with through-hole mount type for easy PCB assembly.
- Maximum gate-source voltage tolerance of ±30 V provides robust gate protection.
- Compact dimensions of 20.7 mm height, 15.87 mm length, and 5.31 mm width enable space-efficient designs.
Product Description
The Vishay IRFP350LCPBF is an N-Channel Enhancement Mode MOSFET transistor designed for high power and high voltage applications with a maximum continuous drain current of 16 A and a drain-source voltage up to 400 V. It comes in a reliable 3-Pin TO-247 package with through-hole mounting capability. Its low on-resistance of 300 milliohms and maximum power dissipation of 190 W enable it to operate efficiently in demanding industrial, power management, and electronic control systems.
Operating between -55°C and 150°C, this MOSFET ensures stable performance under harsh environmental conditions commonly found in industrial, manufacturing, automotive, and HVAC applications. The typical gate charge of 76 nC supports rapid switching, making it suitable for power converters and motor controllers. Its robust gate-source voltage rating of ±30 V protects against voltage spikes, improving device durability.
Compact physical dimensions - 20.7 mm height, 15.87 mm length, and 5.31 mm width - facilitate integration into constrained PCB layouts. The low forward voltage drop of 1.6 V reduces power loss, enhancing overall system efficiency.
Enhancement mode N-Channel MOSFET for high power switching. 16 A maximum continuous drain current at 400 V drain-source voltage. High power dissipation up to 190 W for robust thermal management. Operating temperature range from -55°C to 150°C suitable for industrial use.
Through-hole mount design for reliable PCB installation. Typical gate charge of 76 nC ensures quick switching operation. Maximum gate-source voltage ±30 V to withstand electrical stress. Compact TO-247 package dimensions optimize space.
Low on-resistance minimizes conduction losses.
This MOSFET is ideal for power electronics designs in industrial automation, power supplies, motor drives, and renewable energy systems. Vishay's IRFP350LCPBF offers reliable performance and energy efficiency for diverse application needs.
Explore the Electronics & Electricals category on EnvMart for more semiconductor components and MOSFET products to enhance your electronic designs and manufacturing projects.
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Frequently Asked Questions
The maximum continuous drain current for this model is 16 A.
It has a maximum drain-source voltage rating of 400 V.
The maximum power dissipation rating is 190 W, which supports high power applications.
The operating temperature range is from -55°C to 150°C.
This MOSFET features a through-hole mount type for easy PCB assembly.
The dimensions of the TO-247 package are 20.7 mm in height, 15.87 mm in length, and 5.31 mm in width.
The typical gate charge is 76 nC, which supports fast switching speeds.
It has a maximum gate-source voltage tolerance of ±30 V, providing robust gate protection.
The maximum drain-source resistance is 300 milliohms, which minimizes conduction losses.
This model is suitable for power electronics designs in industrial automation, power supplies, motor drives, and renewable energy systems.
It features an enhancement mode N-channel design, which is suitable for high power switching applications.
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