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DiodesZetex P-Channel MOSFET, 1.1 A Continuous Drain Current, 60 V Drain Source Voltage, Enhancement Mode ZXMP6A13FTA

Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 1mm
Length 3.05mm
Model ZXMP6A13FTA
Width 1.4mm
Mount Type Surface
Series ZXMP6A13F
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Automotive Standard AEC-Q101
Channel Type Type P
Maximum Continuous Drain Current Id 1.1A
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 400mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 806mW
Typical Gate Charge Qg @ Vgs 5.9nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf -0.95V

Key Features

  • Type P channel enhancement mode design ensures efficient switching.
  • Maximum continuous drain current rating of 1.1 amperes for medium power applications.
  • Maximum drain-source voltage of 60 volts suitable for low voltage electronics.
  • Compact 3-pin SOT-23 package allows surface mounting on PCBs.
  • Low typical gate charge of 5.9 nanocoulombs for fast switching performance.
  • Maximum operating temperature up to 150°C ensures reliability in harsh conditions.
  • Automotive standard AEC-Q101 compliance ensures high quality and durability.
  • Maximum power dissipation of 806 milliwatts for efficient thermal management.

Product Description

DiodesZetex ZXMP6A13FTA is a type P-channel enhancement MOSFET designed for efficient switching applications in electronic circuits. It features a maximum continuous drain current of 1.1 amperes and a maximum drain-source voltage of 60 volts. This device is housed in a compact 3-pin SOT-23 surface mount package, suitable for modern PCB assembly.

The MOSFET supports a wide operating temperature range from -55°C up to 150°C, making it suitable for applications requiring reliability under varying thermal conditions. Its low typical gate charge of 5.9 nanocoulombs allows for fast switching speeds and reduced switching losses, benefiting power management circuits.

With a maximum power dissipation of 806 milliwatts, this MOSFET enables stable operation within thermal limits. The device also features forward voltage of approximately -0.95 volts, optimizing conduction efficiency in low voltage applications. The maximum gate-source voltage rating of ±20 volts ensures robust gate protection.

Designed to meet the automotive standard AEC-Q101, the ZXMP6A13FTA guarantees quality and durability for automotive and industrial applications where high standards of reliability are demanded.

This MOSFET is ideal for use in power management, load switching, and electronic control units in industrial, automotive, and consumer electronics sectors. Its surface mount package and electrical characteristics make it versatile for numerous semiconductor discrete applications requiring efficient and reliable P-channel switching components.

Type P channel enhancement mode design ensures efficient switching. Maximum continuous drain current rating of 1.1 amperes for medium power applications. Maximum drain-source voltage of 60 volts suitable for low voltage electronics.

Compact 3-pin SOT-23 package allows surface mounting on PCBs. Low typical gate charge of 5.9 nanocoulombs for fast switching performance. Maximum operating temperature up to 150°C ensures reliability in harsh conditions.

Automotive standard AEC-Q101 compliance ensures high quality and durability. Maximum power dissipation of 806 milliwatts for efficient thermal management. Forward voltage approximately -0.95 volts for optimized conduction losses.

Explore a wide selection of MOSFETs and discrete semiconductor components in our Electronics & Electricals category for diverse industrial and commercial applications.

DiodesZetex P-Channel MOSFET, 1.1 A Continuous Drain Current, 60 V Drain Source Voltage, Enhancement Mode ZXMP6A13FTA
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Frequently Asked Questions

The maximum continuous drain current for this model is 1.1 amperes.

It has a maximum drain-source voltage rating of 60 volts.

The typical gate charge is 5.9 nanocoulombs, allowing for fast switching performance.

The dimensions of the SOT-23 package are 3.05mm in length, 1.4mm in width, and 1mm in height.

The maximum operating temperature for the ZXMP6A13FTA is 150°C.

This model complies with the automotive standard AEC-Q101, ensuring high quality and durability.

The maximum power dissipation for this MOSFET is 806 milliwatts.

The forward voltage is approximately -0.95 volts, optimizing conduction efficiency in low voltage applications.

The minimum operating temperature is -55°C, making it suitable for various thermal conditions.

This model uses surface mounting, suitable for modern PCB assembly.

The maximum gate-source voltage rating is ±20 volts, providing robust gate protection.

This model features a P-channel enhancement mode design, ensuring efficient switching.

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