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Taiwan Semiconductor 40 V 3 A Through Hole DO-201AD Schottky Barrier Rectifier Diode 1N5822 R0
Specifications
| Country of Origin | India |
|---|---|
| Diameter | 5.6mm |
| Brand | Taiwan Semiconductor |
| Height | 5.6mm |
| Length | 9.5mm |
| Model | 1N5822 R0 |
| Width | 5.6mm |
| Mount Type | Through Hole |
| Series | 1N5822 |
| Maximum Operating Temperature | 125°C |
| Package Type | DO-201AD |
| Minimum Operating Temperature | -65°C |
| Pin Count | 2 |
| Maximum Continuous Forward Current If | 3A |
| Peak Reverse Repetitive Voltage Vrrm | 40V |
| Diode Configuration | Single |
| Rectifier Type | Rectifier Diode |
| Peak Reverse Current Ir | 500μA |
| Peak Non-Repetitive Forward Surge Current Ifsm | 70A |
| Maximum Forward Voltage Vf | 950mV |
Key Features
- Features a maximum continuous forward current of 3 A.
- Operates with peak reverse repetitive voltage of 40 V.
- Equipped with low forward voltage drop of 950 mV for high efficiency.
- Compact DO-201AD package with 2 pins for through hole mounting.
- Designed to withstand peak non-repetitive forward surge current of 70 A.
- Operates reliably in temperatures from -65°C up to 125°C.
- Single diode configuration with standard 5.6 mm diameter and length of 9.5 mm.
- Constructed with Schottky barrier technology for minimal loss and fast switching.
Product Description
Taiwan Semiconductor 1N5822 R0 is a high-quality Schottky Barrier Rectifier Diode engineered to provide efficient rectification in electronic and power management applications. The diode supports a maximum continuous forward current of 3 amps and withstands a peak reverse repetitive voltage of 40 volts, making it suitable for low voltage power circuits.
Encased in a through hole DO-201AD package with two pins, this diode features a low forward voltage drop of 950 millivolts which contributes to lower power loss and improved system efficiency. Its rugged design withstands peak non-repetitive forward surge currents up to 70 amps, ensuring reliable performance under transient conditions.
The diode operates across a wide temperature range of -65°C to 125°C, ideal for various industrial, electronic component, and power electronics applications. Its single diode configuration with dimensions approximately 5.6 mm in diameter and height, and 9.5 mm in length, makes it compatible with standard through hole PCB mounting methods.
This component is constructed adhering to RoHS standards with no automotive approvals specified. It is widely used in power supplies, voltage clamping, and rectification circuits where low forward voltage and fast switching performance are critical.
Maximum continuous forward current: 3 A. Peak reverse repetitive voltage: 40 V. Forward voltage drop: 950 mV. Peak non-repetitive forward surge current: 70 A. Operating temperature range: -65°C to 125°C. DO-201AD through hole package.
2-pin configuration. Diameter and height: 5.6 mm; length: 9.5 mm. Low power loss Schottky barrier design. No automotive standards certified.
This Schottky Barrier Rectifier Diode from Taiwan Semiconductor suits industrial electronics, power management, and semiconductor applications requiring durable and efficient rectifiers. EnvMart offers this component to support your circuit design and manufacturing needs.
Explore more products in our Schottky Diodes & Rectifiers category.
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Frequently Asked Questions
The maximum continuous forward current of this diode is 3 A.
It has a peak reverse repetitive voltage rating of 40 V.
The forward voltage drop is 950 mV.
This model can withstand a peak non-repetitive forward surge current of 70 A.
It operates reliably in temperatures ranging from -65°C to 125°C.
The diode is encased in a DO-201AD package, suitable for through hole mounting.
The dimensions are approximately 5.6 mm in diameter and height, and 9.5 mm in length.
It features a single diode configuration with a 2-pin setup.
The peak reverse current is rated at 500 μA.
Yes, this component is constructed adhering to RoHS standards.
It is widely used in power supplies, voltage clamping, and rectification circuits.
This model is classified as a Schottky Barrier Rectifier Diode.
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