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Taiwan Semiconductor 1 kV 1 A Switching Diode 2-Pin DO-41 HER108G

Specifications

Country of Origin India
Diameter 2.7mm
Brand Taiwan Semiconductor
Height 2.7mm
Length 5.2mm
Model HER108G
Width 2.7mm
Mount Type Through Hole
Series HER108G
Maximum Operating Temperature 150°C
Package Type DO-41
Minimum Operating Temperature -65°C
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RS Stock No. 688-1928Brand: Taiwan SemiconductorManufacturers Part No.: HER108GDistrelec Article No.: 304-35-982
Pin Count 2
Automotive Standard AEC-Q101
Maximum Continuous Forward Current If 1A
Peak Reverse Repetitive Voltage Vrrm 1kV
Diode Configuration Single
Rectifier Type Switching
Peak Reverse Current Ir 5μA
Peak Non-Repetitive Forward Surge Current Ifsm 30A
Maximum Forward Voltage Vf 1.7V
Peak Reverse Recovery Time trr 75ns
Taiwan Semiconductor 1 kV 1 A Diode Switching 2-Pin DO-41 HER108GRS Stock No. 688-1928Brand: Taiwan SemiconductorManufacturers Part No.: HER108GDistrelec Article No.: 304-35-982

Key Features

  • Maximum continuous forward current of 1 ampere for reliable operation.
  • Peak reverse repetitive voltage rated at 1 kilovolt.
  • Switching rectifier type with single diode configuration.
  • Operating temperature range from -65°C up to 150°C suitable for harsh environments.
  • Low peak reverse current of 5 microamperes limits leakage.
  • Fast peak reverse recovery time of 75 nanoseconds for efficient switching.
  • Peak non-repetitive forward surge current of 30 amperes for transient tolerance.
  • Package type DO-41 with 2-pin through-hole mount design.

Product Description

Taiwan Semiconductor HER108G is a high-performance switching diode designed for industrial and electronic applications requiring reliable rectification and fast switching capabilities. This diode supports a maximum continuous forward current of 1 ampere and can withstand peak reverse repetitive voltages up to 1 kilovolt, making it suitable for power electronics, automotive electronics, and general purpose rectification circuits.

Featuring a robust DO-41 through-hole package, it offers durable mounting with a compact form factor measuring 5.2 mm length and 2.7 mm diameter. The diode operates efficiently within a wide temperature range from -65°C to 150°C, suitable for demanding environments including industrial machinery and automotive control units.

Its electrical characteristics include a low maximum forward voltage drop of 1.7 volts, a peak reverse current of only 5 microamperes minimizing power loss during reverse bias, and a fast peak reverse recovery time of 75 nanoseconds enhancing switch speed and reducing switching losses.

The HER108G diode can handle peak non-repetitive forward surge currents up to 30 amperes, protecting against transient overcurrents commonly encountered in power supply and automotive circuits. The device also complies with the AEC-Q101 automotive standard, ensuring its reliability and quality for automotive applications.

Taiwan Semiconductor HER108G switching diode is ideal for use in industrial automation, power conversion, automotive electronics, and general electronic device manufacturing requiring consistent performance and durability.

Maximum continuous forward current of 1 ampere for reliable operation. Peak reverse repetitive voltage up to 1 kilovolt. Switching rectifier type with single diode configuration. Compact dimensions and through-hole DO-41 package.

Wide operating temperature range from -65°C to 150°C. Low peak reverse current of 5 microamperes. Fast peak reverse recovery time of 75 nanoseconds. High surge current capability of 30 amperes. Complies with AEC-Q101 automotive standard.

Browse EnvMart’s extensive selection of semiconductor diodes and switching components for your professional electronic assembly needs.

Explore more products in our Semiconductor Switching Diode category.

Taiwan Semiconductor 1 kV 1 A Switching Diode 2-Pin DO-41 HER108G
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Frequently Asked Questions

The HER108G diode supports a maximum continuous forward current of 1 ampere.

It can withstand peak reverse repetitive voltages up to 1 kilovolt.

This diode operates efficiently within a temperature range from -65°C to 150°C.

The HER108G is housed in a DO-41 package with a through-hole mount design.

It features a fast peak reverse recovery time of 75 nanoseconds.

The diode can handle peak non-repetitive forward surge currents up to 30 amperes.

The maximum forward voltage drop is 1.7 volts.

It utilizes a single diode configuration as a switching rectifier.

The peak reverse current is 5 microamperes, which minimizes power loss during reverse bias.

Yes, it complies with the AEC-Q101 automotive standard, ensuring its reliability for automotive applications.

The dimensions are 5.2 mm in length and 2.7 mm in diameter.

It is suitable for use in industrial automation, power conversion, automotive electronics, and general electronic device manufacturing.

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