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Vishay N-Channel MOSFET 17 A 100 V TO-220 3-Pin Through Hole IRFI540GPBF
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 4.8mm |
| Model | IRFI540GPBF |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 17A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 0.077Ω |
| Maximum Power Dissipation Pd | 48W |
Key Features
- Features a TO-220 package with three pins for reliable through-hole mounting.
- Offers low drain-source resistance of 0.077 ohms at 10 V gate-source voltage.
- Supports operating temperatures from -55°C up to 175°C ensuring durability under harsh conditions.
- Capable of dissipating up to 48 W of power to support high-performance applications.
- Optimized for lower switching and conduction losses to improve efficiency.
- Dynamic dV/dt rating enhances durability during rapid voltage changes.
- Lead (Pb) free construction meets environmental standards.
- Applications include battery chargers, inverters, power supplies, and switching mode power supplies (SMPS).
Product Description
Vishay IRFI540GPBF is an N-Channel MOSFET optimized for power electronics requiring robust performance and high efficiency. Housed in a TO-220 three-pin package with through-hole mount type, this MOSFET is engineered with a maximum continuous drain current of 17 A and maximum drain-source voltage of 100 V, suitable for demanding industrial and commercial electronic applications.
The device features an exceptionally low drain-source resistance of 0.077 ohms at a 10 V gate-source voltage, reducing conduction losses and improving overall system efficiency. Designed to operate reliably in temperatures ranging from -55°C to 175°C, it offers strong tolerance to thermal stresses, making it ideal for battery chargers, inverters, power supplies, and switching mode power supply (SMPS) systems.
It supports a maximum power dissipation of 48 W, enabling it to handle substantial loads while maintaining performance integrity. The MOSFET’s isolated package and dynamic dV/dt rating provide enhanced robustness with reduced susceptibility to voltage spikes and rapid switching events.
Dynamic dV/dt rating for improved switching reliability. Isolated TO-220 package for easier heat management and mounting. Lead (Pb) free component adhering to environmental regulations. Low thermal resistance for effective heat dissipation.
Wide operating temperature range ensures versatility in varied environments. Manufactured in China, this component meets high-quality industrial standards and is designed for prolonged operational lifespan without performance compromise.
This MOSFET is extensively used in industrial, commercial, and laboratory equipment requiring reliable and efficient power transistor performance. It is especially beneficial in applications involving battery charging, inverter circuits, power supplies, and SMPS where dependable switching and thermal management are critical.
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Frequently Asked Questions
The maximum continuous drain current for this model is 17 A.
This MOSFET has a maximum drain-source voltage rating of 100 V.
It can dissipate up to 48 W of power, suitable for high-performance applications.
The drain-source resistance is 0.077 ohms at a 10 V gate-source voltage.
It operates reliably in temperatures ranging from -55°C to 175°C.
This model is housed in a TO-220 package with three pins for through-hole mounting.
It is suitable for applications including battery chargers, inverters, power supplies, and switching mode power supplies (SMPS).
The height of this MOSFET is 4.8 mm.
This model features an N-channel design.
Yes, it is a lead (Pb) free component that meets environmental standards.
This component is manufactured in China.
The dynamic dV/dt rating enhances the durability of the MOSFET during rapid voltage changes, improving switching reliability.
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