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Infineon N-Channel Power MOSFET 192 A, 40 V, 8-Pin PQFN Package IRFH8324TRPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.2mm |
| Length | 6.3mm |
| Model | IRFH8324TRPBF |
| Width | 5.3mm |
| Mount Type | Surface |
| Series | IRFH |
| Maximum Operating Temperature | 175°C |
| Package Type | PQFN |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 192A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 0.7mΩ |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Key Features
- Optimized for low RDS(on) and high current capability.
- Ideal for low frequency applications requiring ruggedness and performance.
- Features low thermal resistance to PCB less than 2.3°C/W.
- Softer body-diode compared to previous silicon generation.
- Low profile device with small dimensions suitable for surface mount.
- Automotive standard compliant with AEC-Q101 certification.
- Maximum power dissipation of 81 W supports high power applications.
- Wide operating temperature range from -55°C to 175°C.
Product Description
Infineon IRFH8324TRPBF is a high-performance N-Channel Power MOSFET designed for applications that require large continuous current handling of up to 192 A and a drain-source voltage rating of 40 V. Packaged in an 8-pin PQFN form factor with low profile (5.3mm width, 6.3mm length, and 1.2mm height), this surface-mounted device is optimized for low RDS(on) to improve efficiency and reduce losses in power electronics.
This MOSFET is suitable for use in DC motors, battery management systems, inverters, and DC-DC converters, making it versatile for industrial, automotive, and commercial electronic solutions. Its low thermal resistance to PCB (< 2.3°C/W) enables effective heat dissipation and long-term reliability.
Compared to previous silicon generations, it offers a softer body diode for improved ruggedness. The device supports a maximum power dissipation of 81 W and can operate reliably across a broad temperature range from -55°C to 175°C. Its typical gate charge of 80nC aids in efficient switching performance for dynamic applications.
Optimized low on-resistance enhances power efficiency. Compliant with automotive standard AEC-Q101 ensuring suitability in automotive electronic applications. RoHS compliant confirming adherence to environmental and safety standards.
Compact PQFN package enables integration in space-constrained designs. Surface mount design supports automated assembly processes. This product fulfills the demanding requirements of industrial and automotive power control systems and is a reliable component for advanced semiconductor solutions.
Explore more Power MOSFETs and related semiconductor components in the Electronics & Electricals category at EnvMart for industrial, automotive, and commercial use cases.
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Frequently Asked Questions
The maximum continuous drain current for this model is 192 A.
It has a maximum drain-source voltage rating of 40 V.
This MOSFET supports a maximum power dissipation of 81 W.
The dimensions of this model are 5.3 mm in width, 6.3 mm in length, and 1.2 mm in height.
The typical gate charge at Vgs is 80 nC.
It operates reliably across a temperature range from -55°C to 175°C.
This model is packaged in an 8-pin PQFN form factor, suitable for surface mounting.
Yes, it is compliant with the AEC-Q101 automotive standard.
The maximum gate-source voltage is 20 V.
The forward voltage is specified at 1 V.
It has a low thermal resistance to PCB of less than 2.3°C/W, aiding in effective heat dissipation.
This MOSFET is suitable for applications such as DC motors, battery management systems, inverters, and DC-DC converters.
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