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ROHM P-Channel Power MOSFET 13 A 100 V Enhancement Mode 3-Pin TO-252 RD3P130SPTL1
Specifications
| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Height | 2.3mm |
| Length | 6.8mm |
| Model | RD3P130SPTL1 |
| Width | 6.4mm |
| Mount Type | Surface |
| Series | RD3P130SP |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | Pb-free lead plating, RoHS |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 13A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 200mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2W |
| Typical Gate Charge Qg @ Vgs | 40nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Offers low on-resistance ensuring efficient power switching performance.
- Designed for enhancement mode operation with fast switching speed.
- Supports continuous drain current up to 13 amperes.
- Maximum voltage rating of 100 volts for drain-source voltage.
- Features Pb-free lead plating and RoHS compliant materials.
- Compact 3-pin TO-252 package suitable for surface mounting.
- Operating temperature range from -55°C to 150°C.
- Maximum power dissipation rating of 2 watts.
Product Description
ROHM RD3P130SPTL1 is a P-Channel Power MOSFET designed for efficient switching applications in industrial and electronic systems. This device supports a maximum continuous drain current of 13 A and a drain-source voltage of 100 V, making it suitable for moderate power electronic circuits.
The MOSFET is enclosed in a compact TO-252 3-pin surface mount package, providing compatibility with automated PCB assembly processes. Its enhancement mode operation enables straightforward drive circuit design and fast switching speeds, optimizing power management in devices.
Key technical specs include a maximum drain-source resistance of 200 milliohms and a forward voltage of 1.2 V. With a gate maximum voltage of 20 V and a typical gate charge of 40 nC, the device balances efficient control with performance. The power dissipation rating is 2 W, and the operating temperature range extends from -55°C to +150°C.
The product utilizes Pb-free lead plating and complies with RoHS standards, supporting environmentally responsible manufacturing.
This MOSFET is typically used in power management, switching regulators, and industrial electronics where reliable high-current switching is required. Parallel operation capability and low on-resistance make it a flexible component for scalable designs.
Offers low on-resistance ensuring efficient power switching performance. Designed for enhancement mode operation with fast switching speed. Supports continuous drain current up to 13 amperes. Maximum voltage rating of 100 volts for drain-source voltage.
Features Pb-free lead plating and RoHS compliant materials. Compact 3-pin TO-252 package suitable for surface mounting. Operating temperature range from -55°C to 150°C. Maximum power dissipation rating of 2 watts. Typical gate charge of 40 nano-Coulombs at specified gate voltage.
Drive circuits can be simplified due to enhancement mode and low gate voltage requirements.
This ROHM Power MOSFET represents a high-quality semiconductor device suitable for electronic component inventories in industrial, construction, laboratory, and manufacturing sectors. Explore more ROHM semiconductor products on EnvMart for diverse power electronics applications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 13 A.
This MOSFET has a maximum drain-source voltage rating of 100 V.
The operating temperature range for this unit extends from -55°C to +150°C.
It is enclosed in a compact 3-pin TO-252 surface mount package.
The typical gate charge at the specified gate voltage is 40 nC.
The maximum power dissipation rating is 2 W.
The forward voltage for this device is 1.2 V.
The maximum gate-source voltage is 20 V.
This MOSFET has a maximum drain-source resistance of 200 milliohms.
Yes, this model features Pb-free lead plating and complies with RoHS standards.
This device is a P-Channel MOSFET designed for enhancement mode operation.
The dimensions of this model are 6.8 mm in length, 6.4 mm in width, and 2.3 mm in height.
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