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DiodesZetex N-Channel Enhancement Mode MOSFET 14 A 100 V 8-Pin PowerDI3333 Package DMTH10H009LFG-7
Specifications
| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 800μm |
| Length | 3.3mm |
| Model | DMTH10H009LFG-7 |
| Width | 3.3mm |
| Mount Type | Surface |
| Series | DMTH |
| Maximum Operating Temperature | 175°C |
| Package Type | PowerDI3333 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 14A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 8mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 39W |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Low on-state resistance ensures minimal power loss during operation.
- Advanced technology suitable for DC/DC converter applications.
- Surface mount 8-pin PowerDI3333 package for compact design.
- Maximum drain-source resistance of 8 mΩ for superior efficiency.
- Wide operating temperature range from -55°C to 175°C supports harsh environments.
- Maximum power dissipation rating of 39 W allows high power operation.
- Channel mode is enhancement type for improved switching performance.
- Gate-source voltage maximum rating of 20 V ensures reliable switching.
Product Description
DiodesZetex DMTH10H009LFG-7 N-Channel Enhancement Mode MOSFET is engineered to provide efficient power switching and minimal on-state losses, ideal for industrial and commercial power management applications. Featuring a maximum continuous drain current of 14 A and a drain-source voltage rating of 100 V, this MOSFET suits demanding environments requiring precise and reliable operation.
The device comes in a compact 8-pin PowerDI3333 surface mount package, ensuring easy PCB integration and reduced board space usage. Its low on-resistance (8 mΩ maximum) translates to excellent conduction efficiency, minimizing heat generation and extending component life.
Operation in temperatures ranging from -55°C to 175°C and a power dissipation capability of up to 39 W allows usage in harsh and high-power applications, such as industrial automation, power supplies, DC/DC converters, and motor drives. The enhancement mode channel type offers superior switching speed, improving overall system response and efficiency.
This MOSFET supports a maximum gate-source voltage of ±20 V and exhibits a forward voltage drop of 1.2 V during conduction, making it suitable for high-performance switching. With dimensions of 3.3 mm by 3.3 mm and a height of 800 μm, it combines high performance with a small footprint, optimized for dense electronics applications.
Low on-state resistance ensures minimal power loss during operation. Advanced technology suitable for DC/DC converter applications. Surface mount 8-pin PowerDI3333 package for compact design. Maximum drain-source resistance of 8 mΩ for superior efficiency.
Wide operating temperature range from -55°C to 175°C supports harsh environments. Maximum power dissipation rating of 39 W allows high power operation. Channel mode is enhancement type for improved switching performance.
Gate-source voltage maximum rating of 20 V ensures reliable switching. Forward voltage drop of 1.2 V typical during conduction. Dimensions: length 3.3 mm, width 3.3 mm, height 800 μm. This product is ideal for industrial, electronics manufacturing, power management, and automotive applications requiring reliable, high-efficiency MOSFET components.
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Frequently Asked Questions
The maximum continuous drain current for this model is 14 A.
This MOSFET has a maximum drain-source voltage rating of 100 V.
It features a maximum drain-source resistance of 8 mΩ, ensuring superior efficiency during operation.
The operating temperature range for this MOSFET is from -55°C to 175°C.
The maximum power dissipation rating is 39 W, allowing for high power operation.
This unit comes in an 8-pin PowerDI3333 surface mount package, which is designed for compact integration.
The typical forward voltage drop during conduction is 1.2 V.
The maximum gate-source voltage rating for this MOSFET is ±20 V.
The dimensions of this model are 3.3 mm in length, 3.3 mm in width, and 800 μm in height.
This device uses an enhancement mode channel type, which improves switching performance.
It is suitable for applications in industrial automation, power supplies, DC/DC converters, and motor drives.
The country of origin for this MOSFET is India.
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