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Infineon OptiMOS P Type P-Channel MOSFET 1.5 A, 30 V Enhancement Mode, 3-Pin SOT-23 BSS314PEH6327XTSA1

Category Power MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 1.3mm
Length 2.9mm
Model BSS314PEH6327XTSA1
Width 0.1mm
Mount Type Surface
Series OptiMOS P
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Automotive Standard AEC-Q101
Channel Type Type P
Maximum Continuous Drain Current Id 1.5A
Maximum Drain Source Voltage Vds 30V
Maximum Drain Source Resistance Rds 230mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 500mW
Typical Gate Charge Qg @ Vgs 2.9nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf -1.1V

Key Features

  • Enhancement mode operation ensures controlled conduction for switching applications.
  • Surface-mount SOT-23 package supports automated PCB assembly and space-saving layouts.
  • Maximum continuous drain current of 1.5 A suits moderate load handling.
  • 30 V drain-source voltage rating allows low-voltage system switching.
  • 230 mΩ maximum Rds(on) provides efficient conduction for small loads.
  • Typical gate charge of 2.9 nC reduces switching losses and energy consumption.
  • Wide operating temperature range from -55°C to 150°C supports harsh environments.
  • Automotive AEC-Q101 qualification ensures reliability for vehicle-grade applications.

Product Description

Infineon BSS314PEH6327XTSA1 is a P-type P-Channel MOSFET from the OptiMOS P Series, designed for low-voltage power control with a continuous drain current rating of 1.5 A and a maximum drain-source voltage of 30 V. The device features enhancement mode operation and comes in a compact surface-mount SOT-23 package with 3 pins optimized for automated assembly and minimal board space consumption.

This MOSFET offers efficient conduction with a maximum drain-source resistance of 230 mΩ and a low typical gate charge of 2.9 nC, which helps to reduce switching energy losses. Its maximum gate-source voltage rating is ±20 V, providing flexible gate drive margins while preventing gate overstress. The device operates reliably over a broad temperature range from -55°C up to 150°C, making it suitable for demanding thermal environments typical in automotive and industrial electronics.

The 500 mW power dissipation capability requires careful PCB copper and thermal layout considerations to maintain safe junction temperatures under continuous loads. The Infineon OptiMOS P Channel MOSFET is AEC-Q101 qualified, underscoring its automotive-grade reliability.

This MOSFET is ideal for applications including battery management and protection circuits, load switching in automotive control modules, power rails in handheld and portable electronics, as well as small-signal power switching in sensor nodes. Its compact footprint suits surface-mount designs where board space is at a premium.

Enhancement mode P-Channel MOSFET for power control. Compact 3-pin SOT-23 surface-mount package. Continuous drain current rating of 1.5 A supports moderate loads. Drain-source voltage maximum of 30 V for low-voltage switching.

230 mΩ maximum Rds(on) ensures efficient conduction. Low gate charge of 2.9 nC minimizes switching losses. Wide temperature operation from -55°C to 150°C. AEC-Q101 automotive qualification for vehicle-grade reliability. Maximum power dissipation of 500 mW requires thermal management.

Discover a wide range of MOSFETs and semiconductor components in the Electronics & Electricals category on EnvMart to suit diverse industrial, automotive, and consumer electronics applications.

Explore more products in our Power MOSFET category.

Infineon OptiMOS P Type P-Channel MOSFET 1.5 A, 30 V Enhancement Mode, 3-Pin SOT-23 BSS314PEH6327XTSA1
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Frequently Asked Questions

The maximum continuous drain current for this model is 1.5 A, suitable for moderate load handling.

This MOSFET has a maximum drain-source voltage rating of 30 V, allowing it to be used in low-voltage system switching applications.

The typical gate charge is 2.9 nC, which helps to minimize switching losses and energy consumption.

It comes in a compact 3-pin SOT-23 surface-mount package, optimized for automated PCB assembly.

The maximum power dissipation capability of this unit is 500 mW, which requires careful thermal management in PCB design.

It operates reliably over a wide temperature range from -55°C to 150°C, making it suitable for harsh environments.

This model is AEC-Q101 qualified, ensuring its reliability for automotive applications.

The maximum gate-source voltage rating for this MOSFET is ±20 V, providing flexible gate drive margins.

The maximum drain-source resistance (Rds(on)) is 230 mΩ, which ensures efficient conduction for small loads.

It is suitable for applications such as battery management, load switching in automotive control modules, and power rails in portable electronics.

The height of this model is 1.3 mm, and its width is 0.1 mm, making it compact for space-saving designs.

This model features a P-type channel, specifically designed for enhancement mode operation.

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