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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.3mm |
| Length | 2.9mm |
| Model | BSS314PEH6327XTSA1 |
| Width | 0.1mm |
| Mount Type | Surface |
| Series | OptiMOS P |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 1.5A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 230mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 500mW |
| Typical Gate Charge Qg @ Vgs | 2.9nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.1V |
Infineon BSS314PEH6327XTSA1 is a P-type P-Channel MOSFET from the OptiMOS P Series, designed for low-voltage power control with a continuous drain current rating of 1.5 A and a maximum drain-source voltage of 30 V. The device features enhancement mode operation and comes in a compact surface-mount SOT-23 package with 3 pins optimized for automated assembly and minimal board space consumption.
This MOSFET offers efficient conduction with a maximum drain-source resistance of 230 mΩ and a low typical gate charge of 2.9 nC, which helps to reduce switching energy losses. Its maximum gate-source voltage rating is ±20 V, providing flexible gate drive margins while preventing gate overstress. The device operates reliably over a broad temperature range from -55°C up to 150°C, making it suitable for demanding thermal environments typical in automotive and industrial electronics.
The 500 mW power dissipation capability requires careful PCB copper and thermal layout considerations to maintain safe junction temperatures under continuous loads. The Infineon OptiMOS P Channel MOSFET is AEC-Q101 qualified, underscoring its automotive-grade reliability.
This MOSFET is ideal for applications including battery management and protection circuits, load switching in automotive control modules, power rails in handheld and portable electronics, as well as small-signal power switching in sensor nodes. Its compact footprint suits surface-mount designs where board space is at a premium.
Enhancement mode P-Channel MOSFET for power control. Compact 3-pin SOT-23 surface-mount package. Continuous drain current rating of 1.5 A supports moderate loads. Drain-source voltage maximum of 30 V for low-voltage switching.
230 mΩ maximum Rds(on) ensures efficient conduction. Low gate charge of 2.9 nC minimizes switching losses. Wide temperature operation from -55°C to 150°C. AEC-Q101 automotive qualification for vehicle-grade reliability. Maximum power dissipation of 500 mW requires thermal management.
Discover a wide range of MOSFETs and semiconductor components in the Electronics & Electricals category on EnvMart to suit diverse industrial, automotive, and consumer electronics applications.
Explore more products in our Power MOSFET category.
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