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Vishay N-Channel Power MOSFET 78.4 A 80 V 8-Pin PowerPAK SO-8 SiR586DP-T1-RE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Length | 6.15mm |
| Model | SiR586DP-T1-RE3 |
| Width | 5.15mm |
| Mount Type | Surface |
| Series | SiR |
| Maximum Operating Temperature | 150°C |
| Package Type | PowerPAK SO-8 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 78.4A |
| Maximum Drain Source Voltage Vds | 80V |
| Maximum Drain Source Resistance Rds | 0.0058Ω |
| Maximum Power Dissipation Pd | 71.4W |
| Typical Gate Charge Qg @ Vgs | 19.1nC |
| Maximum Gate Source Voltage Vgs | 20V |
Key Features
- Maximum continuous drain current of 78.4 A for high current handling capacity.
- Drain-source voltage rating up to 80 V suitable for medium voltage operations.
- Equipped with 8-pin PowerPAK SO-8 package for surface mount installations.
- Extremely low drain-source resistance of 0.0058 ohms to minimize power losses.
- Maximum power dissipation of 71.4 W supporting high power applications efficiently.
- Typical gate charge of 19.1 nC enabling fast switching speeds.
- Wide operating temperature range from -55°C to 150°C for reliable performance under extreme conditions.
- Maximum gate-source voltage of 20 V offering good gate drive margin.
Product Description
Vishay SiR586DP-T1-RE3 N-Channel Power MOSFET offers high performance with a continuous drain current of 78.4 A and a drain-source voltage rating of 80 V. Packaged in an 8-pin PowerPAK SO-8 surface-mount form factor, this MOSFET is engineered for applications requiring efficient power switching and management.
This device features a very low drain-source resistance of 0.0058 ohms, significantly reducing power losses and improving overall efficiency. The typical gate charge of 19.1 nC allows for rapid switching speeds, making it suitable for high-frequency applications.
Designed to operate reliably across a wide temperature range from -55°C to 150°C, it accommodates harsh industrial environments. The maximum gate-source voltage is rated at 20 V, providing adequate gate drive margin and protection.
Its robust construction and RoHS compliance make it environmentally friendly and suitable for modern electronic designs. The MOSFET is ideal for use in synchronous rectification, primary side switch circuits, DC/DC converters, and motor drive switch applications in industrial, manufacturing, and power management sectors.
Maximum continuous drain current of 78.4 A enhances high current applications. Drain-source voltage rating of 80 V supports medium voltage requirements. Low RDS(on) value ensures minimal conduction losses. PowerPAK SO-8 package enables compact surface mounting.
High power dissipation rating of 71.4 W for durable operation. Fast switching capability due to low gate charge. Wide temperature tolerance from -55°C to 150°C ensures versatility. Compliant with RoHS environmental standards.
Perfect for power electronics and motor drive applications. 8-pin configuration supports efficient PCB layout options. Explore a wide range of Vishay semiconductor devices at EnvMart for your electronic component sourcing and design needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 78.4 A, which allows for high current handling capacity.
The drain-source voltage rating is up to 80 V, making it suitable for medium voltage operations.
It comes in an 8-pin PowerPAK SO-8 package, designed for surface mount installations.
The maximum power dissipation is rated at 71.4 W, supporting high power applications efficiently.
The typical gate charge is 19.1 nC, which enables fast switching speeds.
It operates reliably across a wide temperature range from -55°C to 150°C, accommodating harsh industrial environments.
The maximum gate-source voltage is rated at 20 V, providing a good gate drive margin.
The dimensions are 6.15 mm in length and 5.15 mm in width.
The maximum drain-source resistance is 0.0058 ohms, which minimizes power losses.
Yes, this model is RoHS compliant, making it suitable for modern electronic designs.
It is ideal for synchronous rectification, primary side switch circuits, DC/DC converters, and motor drive switch applications.
This model features an N-channel type, which is common for power MOSFET applications.
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